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USBLC6-4SC6 数据表(PDF) 5 Page - STMicroelectronics

部件名 USBLC6-4SC6
功能描述  Very low capacitance ESD protection
PDF  13 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

USBLC6-4SC6 数据表(HTML) 5 Page - STMicroelectronics

  USBLC6-4SC6 Datasheet HTML 1Page - STMicroelectronics USBLC6-4SC6 Datasheet HTML 2Page - STMicroelectronics USBLC6-4SC6 Datasheet HTML 3Page - STMicroelectronics USBLC6-4SC6 Datasheet HTML 4Page - STMicroelectronics USBLC6-4SC6 Datasheet HTML 5Page - STMicroelectronics USBLC6-4SC6 Datasheet HTML 6Page - STMicroelectronics USBLC6-4SC6 Datasheet HTML 7Page - STMicroelectronics USBLC6-4SC6 Datasheet HTML 8Page - STMicroelectronics USBLC6-4SC6 Datasheet HTML 9Page - STMicroelectronics Next Button
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Figure 6.
ESD behavior: parasitic phenomena due to unsuitable layout
2.3
How to ensure good ESD protection
While the USBLC6-4SC6 provides high immunity to ESD surge, efficient protection depends
on the layout of the board. In the same way, with the rail to rail topology, the track from data
lines to I/O pins, from VCC to the VBUS pin and from GND plane to GND pin must be as short
as possible to avoid overvoltages due to parasitic phenomena (see Figure 7 and Figure 8 for
layout considerations)
VBUS
LI/O
LVBUS
LGND
LI/O
LGND
V
pin
CC
VCL
VF
I/O pin
VTRANSIL
V+ V
TRANSIL
F
-VF
VCL-
t = 1 ns
r
t
t
t = 1 ns
r
VCL+
GND pin
Data line
Positive
Sur ge
Negative
Sur ge
ESD sur ge on data line
di
dt
LI/O
+ LGND
di
dt
di
dt
-LI/O
- LGND
di
dt
di
dt
V
+ =V
+V + L
+ L
sur ge > 0
CL
TRANSIL
F
I/O
GND
V
= -V - L
- L
sur ge > 0
CL-
F
I/O
GND
di
dt
di
dt
di
dt
di
dt
di
dt
Rd.Ip
V
V
BR
TRANSIL
+
=
Figure 7.
ESD behavior: optimized layout and
addition of a capacitance of 100 nF
Figure 8.
ESD behavior: measurement
conditions (with coupling
capacitance)
Unsuitable layout
Optimized layout
TEST BOARD
Vbus
ESD SURGE
OUT
IN
USBLC6-4SC6



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