L6911E datasheet(8/34 Pages) STMICROELECTRONICS

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Electrical characteristics

L6911E

8/34

Electrical characteristics

Table 5. Electrical characteristic (VCC = 12V; TA = 25°C unless otherwise specified)

Symbol

Parameter

Test condition

Min

Typ

Max

Unit

VCC supply current

Icc

Vcc supply current

UGATE and LGATE open

Power-ON

Turn-On VCC threshold

VOCSET = 4.5V

4.6

Turn-Off VCC threshold

VOCSET = 4.5V

3.6

Rising VOCSET threshold

1.26

ISS

Soft start current

µA

Oscillator

Free running frequency

RT = OPEN

180

200

220

kHz

Total Variation

6 K

Ω < RT to GND < 200 KΩ

-15

∆VOSC Ramp amplitude

RT = OPEN

1.9

Vp-p

Reference and DAC

DACOUT voltage accuracy

VID0, VID1,VID2, VID3, VID25mV

see Table 6 on page 9;

TA = 0 to 70°C

-1

VID Pull-Up voltage

3.1

Error amplifier

DC gain

GBWP

Gain-bandwidth product

MHz

Slew-rate

COMP = 10pF

µS

Gate drivers

IUGATE

High side source current

VBOOT - VPHASE = 12V,

VUGATE - VPHASE = 6V

11.3

RUGATE

High side sink resistance

VBOOT - VPHASE = 12V,

IUGATE = 300mA

Ω

ILGATE

Low side source current

VCC = 12V, VLGATE = 6V

0.9

1.1

RLGATE

Low side sink resistance

Vcc=12V, ILGATE = 300mA

1.5

Ω

Output driver dead time

PHASE connected to GND

120

Protections

Over voltage trip (VSEN/DACOUT) VSEN rising

117

120

IOCSET

OCSET current source

VOCSET = 4.5V

170

200

230

µA

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