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TDA7563ASM 数据表(PDF) 7 Page - STMicroelectronics |
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TDA7563ASM 数据表(HTML) 7 Page - STMicroelectronics |
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7 / 35 page ![]() TDA7563A Electrical specifications 7/35 2 Electrical specifications 2.1 Absolute maximum ratings 2.2 Thermal data 2.3 Electrical characteristics Table 1. Absolute maximum ratings Symbol Parameter Value Unit Vop Operating supply voltage 18 V VS DC supply voltage 28 V Vpeak Peak supply voltage (for t = 50ms) 50 V VCK CK pin voltage 6 V VDATA Data pin voltage 6 V IO Output peak current (not repetitive t = 100ms) 8 A IO Output peak current (repetitive f > 10Hz) 6 A Ptot Power dissipation Tcase = 70°C 85 W Tstg, Tj Storage and junction temperature -55 to 150 °C Table 2. Thermal data Symbol Parameter PowerSO36 Flexiwatt 27 Unit Rth j-case Thermal resistance junction to case Max 1 1 °C/W Table 3. Electrical characteristics (Refer to the test circuit, VS = 14.4V; f=1kHz; RL=4Ω; Tamb= 25°C unless otherwise specified) Symbol Parameter Test condition Min. Typ. Max. Unit Power amplifier VS Supply voltage range 8 18 V Id Total quiescent drain current 170 300 mA PO Output power Max. power (VS = 15.2V, square wave input (2Vrms)) 50 W THD = 10% THD = 1% 25 20 28 22 W W RL = 2Ω; EIAJ (VS = 13.7V) RL = 2Ω; THD 10% RL = 2Ω; THD 1% RL = 2Ω; max power 55 40 32 60 68 50 40 75 W W W W |
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