TS2012FC datasheet(7/31 Pages) STMICROELECTRONICS

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TS2012FC

Electrical characteristics

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Electrical characteristics

3.1

Electrical characteristics tables

Table 5.

VCC = +5V, GND = 0V, Vic=2.5V, Tamb = 25°C (unless otherwise specified)

Symbol

Parameters and test conditions

Min.

Typ.

Max.

Unit

ICC

Supply current

No input signal, no load, both channels

ISTBY

Standby current

No input signal, VSTBY = GND

µA

Voo

Output offset voltage

Floating inputs, G = 6dB, RL = 8Ω

Output power

THD + N = 1% max, f = 1kHz, RL = 4Ω

THD + N = 1% max, f = 1kHz, RL = 8Ω

THD + N = 10% max, f = 1kHz, RL = 4Ω

THD + N = 10% max, f = 1kHz, RL = 8Ω

1.85

1.15

2.5

1.6

THD + N

Total harmonic distortion + noise

Po = 0.8W, G = 6dB, f =1kHz, RL = 8Ω

0.5

Efficiency

Efficiency per channel

Po = 1.85W, RL = 4Ω +15µH

Po = 1.16 W, RL = 8Ω+15µH

PSRR

Power supply rejection ratio with inputs grounded

Cin=1µF

(1),f = 217Hz, R

L = 8Ω, Gain=6dB,

Vripple = 200mVpp

Crosstalk

Channel separation

Po = 0.9W, G = 6dB, f =1kHz, RL = 8Ω

CMRR

Common mode rejection ratio

Cin=1µF, f = 217Hz, RL = 8Ω, Gain=6dB,

ΔVICM = 200mVpp

Gain

Gain value with no load

G1 = G0 = VIL

G1 = VIL & G0 = VIH

G1 = VIH & G0 = VIL

G1 = G0 = VIH

5.5

11.5

17.5

23.5

6.5

12.5

18.5

24.5

Zin

Single-ended input impedance

Referred to ground

Gain = 6dB

Gain = 12dB

Gain = 18dB

Gain = 24dB

7.5

FPWM

Pulse width modulator base frequency

190

280

370

kHz

SNR

Signal to noise ratio (A-weighting)

Po = 1.1W, G = 6dB, RL = 8Ω

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