TS2012FC datasheet(11/31 Pages) STMICROELECTRONICS

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TS2012FC

Electrical characteristics

11/31

Table 7.

VCC= +2.5V, GND= 0V, Vic=1.25V, Tamb= 25°C (unless otherwise specified)

Symbol

Parameter

Min.

Typ.

Max.

Unit

ICC

Supply current

No input signal, no load, both channels

2.8

ISTBY

Standby current

No input signal, VSTBY = GND

0.45

µA

Voo

Output offset voltage

Floating inputs, G = 6dB, RL = 8Ω

Output power

THD + N = 1% max, f = 1kHz, RL = 4Ω

THD + N = 1% max, f = 1kHz, RL = 8Ω

THD + N = 10% max, f = 1kHz, RL = 4Ω

THD + N = 10% max, f = 1kHz, RL = 8Ω

0.45

0.3

0.6

0.38

THD + N

Total harmonic distortion + noise

Po = 0.2W, G = 6dB, f =1kHz, RL = 8Ω

0.2

Efficiency

Efficiency per channel

Po = 0.45W, RL = 4Ω +15µH

Po = 0.3W, RL = 8Ω+15µH

PSRR

Power supply rejection ratio with inputs grounded

Cin=1µF

(1),f = 217Hz, R

L = 8Ω, Gain=6dB,

Vripple = 200mVpp

Crosstalk

Channel separation

G = 6dB, f =1kHz, RL = 8Ω

CMRR

Common mode rejection ratio

Cin=1µF, f = 217Hz, RL = 8Ω, Gain=6dB,

ΔVICM = 200mVpp

Gain

Gain value with no load

G1 = G0 = VIL

G1 = VIL & G0 = VIH

G1 = VIH & G0 = VIL

G1 = G0 = VIH

5.5

11.5

17.5

23.5

6.5

12.5

18.5

24.5

Zin

Single-ended input impedance

Referred to ground

Gain = 6dB

Gain = 12dB

Gain = 18dB

Gain = 24dB

7.5

FPWM

Pulse width modulator base frequency

190

280

370

kHz

SNR

Signal-to-noise ratio (A-weighting)

Po = 0.28W, G = 6dB, RL = 8Ω

tWU

Total wake-up time(2)

37.8

tSTBY

Standby time(2)

812

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