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HD151TS207SS 数据表(PDF) 29 Page - Renesas Technology Corp |
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HD151TS207SS 数据表(HTML) 29 Page - Renesas Technology Corp |
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29 / 38 page ![]() HD151TS207SS Rev.1.00, Apr.25.2003, page 29 of 38 DC Electrical Characteristics CPU/CPU# Clock Ta = 0°C to 70°C, VDD = 3.3 V, Iref = 475 Ω Item Symbol Min Typ * 1 Max Unit Test Conditions Output voltage VO 1.20 V Rp = 49.9 Ω, VDD = 3.3 V Output Current IO I(nom) * 2 mA VDD = 3.3 V Output resistance 3000 Ω VO = 1.2 V Notes: 1. For conditions shown as Min or Max, use the appropriate value specified under recommended operating conditionaI (nom) is output current(Ioh) shown in below. 2. Ioh = VDD/(3Rr) = 3.3/(3x475) = 2.32 mA, Ioh x6 = 13.89 mA (Voh @Z: 0.695 V @50 Ω), Ioh x2 = 4.63 mA (Voh @Z: 0.232 V @50 Ω) AC Electrical Characteristics CPU/CPU# Clock (CPU at 0.7V Timing) Ta = 0°C to 70°C, VDD = 3.3 V, CL = 2 pF, Rs = 33.2 Ω, Rp = 49.9 Ω Item Symbol Min Typ Max Unit Test Conditions Notes Cycle to cycle jitter tCCS |125| ps Note1 CPU Group Skew (CPU clock out to CPU clock out) tskS |100| ps Rise time tr 175 700 ps VO = 0.175 V to 0.525 V 200MHz Fall time tf 175 700 ps VO = 0.175 V to 0.525 V 200MHz Clock Duty Cycle 45 50 55 % 200MHz CPU clock period(100) 9.99 ns CPU clock period(133) 7.49 ns CPU clock period(166) 5.99 ns CPU clock period(200) 4.99 ns Cross point(0.7V) voltage Vcross 0.25 0.55 V 200MHz Note: 1. Difference of cycle time between two adjoining cycles. |
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