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FS10AS-06 数据表(PDF) 4 Page - Renesas Technology Corp

部件名 FS10AS-06
功能描述  High-Speed Switching Use Nch Power MOS FET
PDF  7 Pages
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制造商  RENESAS [Renesas Technology Corp]
网页  http://www.renesas.com
标志 RENESAS - Renesas Technology Corp

FS10AS-06 数据表(HTML) 4 Page - Renesas Technology Corp

  FS10AS-06 Datasheet HTML 1Page - Renesas Technology Corp FS10AS-06 Datasheet HTML 2Page - Renesas Technology Corp FS10AS-06 Datasheet HTML 3Page - Renesas Technology Corp FS10AS-06 Datasheet HTML 4Page - Renesas Technology Corp FS10AS-06 Datasheet HTML 5Page - Renesas Technology Corp FS10AS-06 Datasheet HTML 6Page - Renesas Technology Corp FS10AS-06 Datasheet HTML 7Page - Renesas Technology Corp  
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FS10AS-06
Rev.1.00, Aug.20.2004, page 4 of 6
0
8
16
24
32
40
Tc = 25°C
VDS = 10V
Pulse Test
100
101
2
3
4
5
7
102
2
3
4
5
7
VDS = 5V
Pulse Test
125°C
75°C
Tc = 25°C
0
4812
16
20
100
101
23
3
57
7 102
2
44 5
Transfer Characteristics (Typical)
Gate-Source Voltage VGS (V)
Forward Transfer Admittance vs.
Drain Current (Typical)
Drain Current ID (A)
102
3
5
7
103
2
3
5
7
104
101
2
3
5
7
100 2101
35 7
35 7
2
102
35 7
2 3
2
Ciss
Coss
Crss
100
101
2
3
4
5
7
102
2
3
4
5
7
td(off)
td(on)
tr
Tch = 25°C
VDD = 30V
VGS = 10V
RGEN = RGS = 50
Ω
tf
100
101
23
3
57
7 102
2
44 5
0
4
8
12
16
20
048
12
16
20
VDS = 10V
20V
40V
Tch = 25°C
ID = 10A
0
8
16
24
32
40
0
0.4
0.8
1.2
1.6
2.0
VGS = 0V
Pulse Test
Tc = 125°C
75°C
25°C
Capacitance vs.
Drain-Source Voltage (Typical)
Drain-Source Voltage VDS (V)
Switching Characteristics (Typical)
Drain Current ID (A)
Gate-Source Voltage vs.
Gate Charge (Typical)
Gate Charge Qg (nC)
Source-Drain Diode Forward
Characteristics (Typical)
Source-Drain Voltage VSD (V)
Tch = 25°C
f = 1MHz
VGS = 0V



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