FS10AS-06 datasheet(1/7 Pages) RENESAS

部件名	FS10AS-06

功能描述	High-Speed Switching Use Nch Power MOS FET

PDF	7 Pages

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制造商	RENESAS [Renesas Technology Corp]

网页	http://www.renesas.com

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1 / 7 page

Rev.1.00, Aug.20.2004, page 1 of 6

FS10AS-06

High-Speed Switching Use

Nch Power MOS FET

REJ03G0240-0100

Rev.1.00

Aug.20.2004

Features

• Drive voltage : 10 V

• V

DSS : 60 V

• r

DS(ON) (max) : 78 m

Ω

• I

D : 10 A

• Recovery Time of the Integrated Fast Recovery Diode (TYP.) : 55 ns

Outline

MP-3A

1

3

2, 4

2

4

1. Gate

2. Drain

3. Source

4. Drain

Applications

Motor control, lamp control, solenoid control, DC-DC converters, etc.

Maximum Ratings

(Tc = 25°C)

Parameter

Symbol

Ratings

Unit

Conditions

Drain-source voltage

VDSS

60

V

VGS = 0 V

Gate-source voltage

VGSS

±20

V

VDS = 0 V

Drain current

ID

10

A

Drain current (Pulsed)

IDM

40

A

Avalanche current (Pulsed)

IDA

10

A

L = 100

µH

Source current

IS

10

A

Source current (Pulsed)

ISM

40

A

Maximum power dissipation

PD

30

W

Channel temperature

Tch

– 55 to +150

°C

Storage temperature

Tstg

– 55 to +150

°C

Mass

—

0.32

g

Typical value

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