FS10AS-06 datasheet(2/7 Pages) RENESAS

2 / 7 page

FS10AS-06

Rev.1.00, Aug.20.2004, page 2 of 6

Electrical Characteristics

(Tch = 25°C)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test conditions

Drain-source breakdown voltage

V(BR)DSS

—

ID = 1 mA, VGS = 0 V

Gate-source leakage current

IGSS

——

±0.1

µAVGS = ±20 V, VDS = 0 V

Drain-source leakage current

IDSS

——

0.1

VDS = 60 V, VGS = 0 V

Gate-source threshold voltage

VGS(th)

2.0

3.0

4.0

ID = 1 mA, VDS = 10 V

Drain-source on-state resistance

rDS(ON)

—58

Ω

ID = 5 A, VGS = 10 V

Drain-source on-state voltage

VDS(ON)

—

0.29

0.39

ID = 5 A, VGS = 10 V

Forward transfer admittance

| yfs |—

9.0

—

ID = 5 A, VDS = 5 V

Input capacitance

Ciss

—

600

—

Output capacitance

Coss

—

180

—

Reverse transfer capacitance

Crss

—

VDS = 10 V, VGS = 0 V,

f = 1MHz

Turn-on delay time

td(on)

—18—

Rise time

—22—

Turn-off delay time

td(off)

—30—

Fall time

—17—

VDD = 30 V, ID = 5 A,

VGS = 10 V,

RGEN = RGS = 50

Ω

Source-drain voltage

VSD

—1.0

1.5

IS = 5 A, VGS = 0 V

Thermal resistance

Rth(ch-c)

—

4.17

°C/W

Channel to case

Reverse recovery time

trr

—55—

IS = 10 A, dis/dt = –100 A/

µs

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