STV0056AF datasheet(17/27 Pages) STMICROELECTRONICS

17 / 27 page

Vbg 1.2V

REF (2.4V)

10k

Ω

10k

Ω

GND 0V

400

µA

Figure 24

REF 2.4V

Pins 59 - 53

LEVEL R

LEVEL L

50k

Ω

100

µA

49k

Ω

49k

Ω

Audio

Figure 25

REF 2.4V

Pins 58 - 54

PK IN R

PK IN L

67k

Ω

100

µA

To Peak Det

Figure 26

Video Pads

DD 5V

GND 5V

Digital Pads

205

Ω

A 12V

A GND R

Audio Pads

BIP

12V

Substrate

DZPN1

BIP 10vpl

Vpp

Vmm

Pins 41 - 42

A GND L

Pins 10 - 11

V 12V

Pins 13 - 14

V GND

Figure 27

VREF

The 400

µA source is off during stand-by mode.

LEVEL L, LEVEL R

PK IN L, PK IN R

V 12V

Doubled bonded (two bond wires and two pads for

one package pin) :

- One pad is connected to all of the 12V ESD and

video guard rings.

- The second pad is connected to power up the

video block.

V GND

Doubled bonded :

- One pad is connectedto power-up all of the video

mux and I/O.

- The second pad is only as a low noise GND for

the video input.

VDD 5V, GND 5V

Connected to XTL oscillator and the bulk of the

CMOS logic and 5V ESD.

A GND

Doubled bonded :

- One pad connected to the left VCO, dividers,

mixers and guard ring. the guard connection is

star connected directly to the pad.

- The second pad is connected to both AGC amps

and the deemphasis amplifiers, frequency syn-

thesis and FM deviation selection circuit for both

channels.

A 12V

Doubled bonded :

- One pad connected to the ESD and guard ring.

- The second pad is connected to the main power

for all of the audio parts.

A GND R

Boubled bonded :

- One pad connected to the right VCO, dividers,

mixers and guard ring. The guard connection is

star connected directly to the pad.

- The second pad is connected to the bias block,

audio noise reduction, volume, mux and ESD.

A third bond wire on this pin is connected directly

to the die pad (substrate).

PIN INTERNAL CIRCUITRY (continued)

STV0056AF

17/27

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