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BCR16CS 数据表(PDF) 4 Page - Renesas Technology Corp

部件名 BCR16CS
功能描述  MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
PDF  12 Pages
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制造商  RENESAS [Renesas Technology Corp]
网页  http://www.renesas.com
标志 RENESAS - Renesas Technology Corp

BCR16CS 数据表(HTML) 4 Page - Renesas Technology Corp

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Mar. 2002
MITSUBISHI SEMICONDUCTOR
〈TRIAC〉
BCR16CS
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
Refer to the page 6 as to the product guaranteed
maximum junction temperature 150
°C
23
102
57 103
1.6
0
23
10–1
57 100 23 5 7 101 23 5 7 102
0.8
0.6
0.4
0.2
1.0
1.2
1.4
100
23
101
57 102 23 5 7 103 23 5 7 104
3
2
101
7
5
3
2
7
5
7
5
3
2
10–1
VGD = 0.2V
PGM = 5W
PG(AV) = 0.5W
VGM = 10V
VGT = 1.5V
IGM = 2A
IFGT I, IRGT I, IRGT III
101
103
7
5
3
2
–60
–20
20
102
7
5
3
2
60
100
140
4
4
–40
0
40
80
120
101
103
7
5
3
2
–60
–20
20
102
7
5
3
2
60
100
140
4
4
–40
0
40
80
120
IFGT I, IRGT I
IRGT III
40
30
15
10
5
35
25
20
0
20
0
24
8
6
1012141618
40
12
10
8
160
120
100
60
20
0
20
0
80
140
2
4
614 16 18
GATE CURRENT (mA)
GATE CHARACTERISTICS
(
Ι, ΙΙ AND ΙΙΙ)
TYPICAL EXAMPLE
GATE TRIGGER CURRENT VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (
°C)
TYPICAL EXAMPLE
GATE TRIGGER VOLTAGE VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (
°C)
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(JUNCTION TO CASE)
CONDUCTION TIME
(CYCLES AT 60Hz)
360
°
CONDUCTION
RESISTIVE,
INDUCTIVE
LOADS
MAXIMUM ON-STATE POWER
DISSIPATION
RMS ON-STATE CURRENT (A)
CURVES APPLY REGARDLESS
OF CONDUCTION ANGLE
360
°
CONDUCTION
RESISTIVE,
INDUCTIVE
LOADS
ALLOWABLE CASE TEMPERATURE
VS. RMS ON-STATE CURRENT
RMS ON-STATE CURRENT (A)



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