Mar. 2002

SUPPLY

VOLTAGE

TIME

TIME

TIME

MAIN CURRENT

MAIN

VOLTAGE

(di/dt)c

(dv/dt)c

MITSUBISHI SEMICONDUCTOR

〈TRIAC〉

BCR16CS

MEDIUM POWER USE

NON-INSULATED TYPE, PLANAR PASSIVATION TYPE

✽2. Measurement using the gate trigger characteristics measurement circuit.

✽3. Case temperature is measured on the T2 terminal.

°C/W.

✽5. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.

Test conditions

Commutating voltage and current waveforms

(inductive load)

1. Junction temperature

°C

2. Rate of decay of on-state commutating current

3. Peak off-state voltage

Symbol

Parameter

Repetitive peak off-state current

On-state voltage

Gate non-trigger voltage

Thermal resistance

Critical-rate of rise of off-state

commutating voltage

Test conditions

°C

Unit

mA

V

V

V

V

mA

mA

mA

V

°C/W

V/

µs

Typ.

—

—

—

—

—

—

—

—

—

—

—

!

@

#

!

@

#

ELECTRICAL CHARACTERISTICS

Limits

Min.

—

—

—

—

—

—

—

—

0.2

—

10

Max.

2.0

1.5

1.5

1.5

1.5

20

20

20

—

1.4

—

PERFORMANCE CURVES

Refer to the page 6 as to the product guaranteed

maximum junction temperature 150

°C

4.4

0.4

1.2

2.4

3.2

0.8

1.6 2.0

2.8

3.6 4.0

7

5

3

2

7

5

3

2

7

5

3

2

°C

°C

23

80

60

40

20

23

44

100

120

140

160

180

200

0

MAXIMUM ON-STATE CHARACTERISTICS

ON-STATE VOLTAGE (V)

RATED SURGE ON-STATE CURRENT

CONDUCTION TIME

(CYCLES AT 60Hz)

✽5