BCR16CS datasheet(6/12 Pages) RENESAS

6 / 12 page

Mar. 2002

MITSUBISHI SEMICONDUCTOR

〈TRIAC〉

BCR16CS

MEDIUM POWER USE

NON-INSULATED TYPE, PLANAR PASSIVATION TYPE

Refer to the page 6 as to the product guaranteed

maximum junction temperature 150

°C

101

103

100

5 7 101

102

5 7 102

IRGT III

IRGT I

IFGT I

101

57 102 23 5 7 103 23 5 7 104

120

100

140

160

101

100

57 101

5 7 102

100

BREAKOVER VOLTAGE VS.

RATE OF RISE OF

OFF-STATE VOLTAGE

RATE OF RISE OF OFF-STATE VOLTAGE (V/

µs)

TYPICAL EXAMPLE

Tj = 125

°C

I QUADRANT

III QUADRANT

COMMUTATION CHARACTERISTICS

RATE OF DECAY OF ON-STATE

COMMUTATING CURRENT (A /ms)

TYPICAL

EXAMPLE

Tj = 125

°C

IT = 4A

τ = 500µs

VD = 200V

f = 3Hz

I QUADRANT

III QUADRANT

MINIMUM

CHARAC-

TERISTICS

VALUE

SUPPLY

VOLTAGE

TIME

MAIN CURRENT

MAIN

VOLTAGE

(di/dt)c

(dv/dt)c

GATE TRIGGER CURRENT VS.

GATE CURRENT PULSE WIDTH

GATE CURRENT PULSE WIDTH (

µs)

TYPICAL EXAMPLE

Ω

TEST PROCEDURE 1

TEST PROCEDURE 3

TEST PROCEDURE 2

GATE TRIGGER CHARACTERISTICS TEST CIRCUITS

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