STW6NA80 datasheet(1/10 Pages) STMICROELECTRONICS

部件名	STW6NA80

功能描述	N - CHANNEL 800V - 1.8ohm - 5.4A - TO-247/ISOWATT218 FAST POWER MOS TRANSISTOR

PDF	10 Pages

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制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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1 / 10 page

STW6NA80

STH6NA80FI

N - CHANNEL 800V - 1.8

Ω - 5.4A - TO-247/ISOWATT218

FAST POWER MOS TRANSISTOR

s

TYPICAL RDS(on) = 1.8

Ω

s

AVALANCE RUGGED TECHNOLOGY

s

100% AVALANCHE TESTED

s

REPETITIVE AVALANCHE DATA AT 100

oC

s

LOW GATE CHARGE

s

VERY HIGH CURRENT CAPABILITY

s

APPLICATION ORIENTED

CHARACTERIZATION

APPLICATIONS

s

HIGH CURRENT, HIGH SPEED SWITCHING

s

SOLENOID AND RELAY DRIVERS

s

REGULATORS

s

DC-DC & DC-AC CONVERTERS

s

MOTOR CONTROL, AUDIO AMPLIFIERS

s

AUTOMOTIVE ENVIRONMENT (INJECTION,

ABS, AIR-BAG, LAMPDRIVERS, Etc.)

®

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Un it

ST W6NA80

STH6NA80F I

VDS

Drain-source Voltage (VGS =0)

800

V

VDGR

Drain- gate Volt age (RGS =20 k

Ω)

800

V

VGS

G ate-source Voltage

± 30

V

ID

Drain Current (continuous) at Tc =25

oC5.4

3.4

A

ID

Drain Current (continuous) at Tc =100

oC3.4

2.1

A

IDM (

•)

Drain Current (pulsed)

22

A

Ptot

T otal Dissipation at Tc =25

oC

150

60

W

Derating Factor

1.2

0.48

W/

o C

VISO

I nsulat ion W ithstand Voltage (DC)



4000

V

Tstg

Storage Temperat ure

-65 to 150

o C

Tj

Max. Operating Junction Temperature

150

o C

(

•) Pulse width limited by safe operating area

TYPE

VDSS

RDS(on)

ID

STW 6NA80

STH6NA80FI

800 V

<2.2

Ω

<2.2

Ω

5. 4 A

3. 4 A

October 1998

1

2

3

TO-247

ISOWATT218

1

2

3

1/10

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