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STW6NA80 数据表(PDF) 2 Page - STMicroelectronics

部件名 STW6NA80
功能描述  N - CHANNEL 800V - 1.8ohm - 5.4A - TO-247/ISOWATT218 FAST POWER MOS TRANSISTOR
PDF  10 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STW6NA80 数据表(HTML) 2 Page - STMicroelectronics

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THERMAL DATA
TO-247
ISOW AT T218
Rthj-case
Thermal Resistance Junction-case
Max
0.83
2.08
oC/W
Rthj-amb
Rthc-sink
T l
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature For Soldering Purpose
30
0. 1
300
oC/W
oC/W
oC
AVALANCHE CHARACTERISTICS
Symbo l
Parameter
Max Valu e
Unit
IAR
Avalanche Current , Repet itive or Not-Repet itive
(pulse width limited by Tj max,
δ <1%)
5. 4
A
EAS
Single Pulse Avalanche Energy
(starting Tj =25
oC, ID =IAR,VDD =50 V)
150
mJ
EAR
Repetitive Avalanche Energy
(pulse width limited by Tj max,
δ <1%)
5. 8
mJ
IAR
Avalanche Current , Repet itive or Not-Repet itive
(Tc = 100
oC, pulse width limited by Tj max, δ <1%)
3. 4
A
ELECTRICAL CHARACTERISTICS (Tcase =25
oC unless otherwise specified)
OFF
Symbo l
Parameter
Test Con ditions
Min.
T yp.
Max.
Unit
V(BR)DSS
Drain-source
Breakdown Voltage
ID =250
µAVGS =0
800
V
IDSS
Zero G ate Voltage
Drain Current (VGS =0)
VDS =Max Rating
VDS =Max Rating x0.8
Tc =100
oC
25
50
µA
µA
IGSS
Gat e-body Leakage
Current (VDS =0)
VGS =
± 30 V
± 100
nA
ON (
∗)
Symbo l
Parameter
Test Con ditions
Min.
T yp.
Max.
Unit
VGS(th)
Gat e Threshold
Voltage
VDS =VGS
ID = 250
µA
2.25
3
3.75
V
RDS(on)
Static Drain-source O n
Resist ance
VGS =10 V
ID =3 A
VGS =10 V
ID =3 A
Tc =100
oC
1.8
2. 2
4. 4
Ω
Ω
ID(on)
On Stat e Drain Current
VDS >ID(on) xRDS(on)max
VGS =10 V
5. 4
A
DYNAMIC
Symbo l
Parameter
Test Con ditions
Min.
T yp.
Max.
Unit
gfs (
∗)Forward
Transconduct ance
VDS >ID(on) xRDS(on)max
ID =3 A
3
5.5
S
Ciss
Cos s
Crss
Input Capacitance
Out put Capacitance
Reverse T ransfer
Capacitance
VDS =25 V
f = 1 MHz
VGS = 0
1250
140
35
1700
190
50
pF
pF
pF
STW6NA80-STH6NA80FI
2/10



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