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STW6NA80 数据表(PDF) 3 Page - STMicroelectronics

部件名 STW6NA80
功能描述  N - CHANNEL 800V - 1.8ohm - 5.4A - TO-247/ISOWATT218 FAST POWER MOS TRANSISTOR
PDF  10 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STW6NA80 数据表(HTML) 3 Page - STMicroelectronics

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ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbo l
Parameter
Test Con ditions
Min.
T yp.
Max.
Unit
td(on)
tr
Turn-on Time
Rise Time
VDD = 400 V
ID =3 A
RG =4.7
Ω
VGS =10 V
(see test circuit, figure 3)
40
100
55
135
ns
ns
(di/dt)on
Turn-on Current Slope
VDD = 640 V
ID =6 A
RG =47
Ω
VGS =10 V
(see test circuit, f igure 5)
180
A/
µs
Qg
Q gs
Qgd
Tot al Gate Charge
Gat e-Source Charge
Gat e-Drain Charge
VDD = 640 V
ID =6 A
VGS =10 V
55
8
24
75
nC
nC
nC
SWITCHING OFF
Symbo l
Parameter
Test Con ditions
Min.
T yp.
Max.
Unit
tr(Voff)
tf
tc
Off -volt age Rise Time
Fall Time
Cross-over Time
VDD = 640 V
ID =6 A
RG =47
Ω
VGS =10 V
(see test circuit, figure 5)
75
25
110
100
35
150
ns
ns
ns
SOURCE DRAIN DIODE
Symbo l
Parameter
Test Con ditions
Min.
T yp.
Max.
Unit
ISD
ISDM (
•)
Source-drain Current
Source-drain Current
(pulsed)
5. 4
22
A
A
VSD (
∗)
Forward On Volt age
ISD =6 A
VGS =0
1. 6
V
trr
Qrr
IRRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
ISD = 6 A
di/dt = 100 A/
µs
VDD = 100 V
Tj =150
oC
(see test circuit, figure 5)
800
15.2
38
ns
µC
A
(
∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(
•) Pulse width limited by safe operating area
Safe Operating Area for TO-247
Safe Operating Area for ISOWATT218
STW6NA80-STH6NA80FI
3/10



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