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L55NH3LL 数据表(PDF) 3 Page - STMicroelectronics |
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L55NH3LL 数据表(HTML) 3 Page - STMicroelectronics |
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3 / 14 page ![]() STL55NH3LL Electrical ratings 3/14 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage (VGS = 0) 30 V VGS (1) 1. Continuous mode Gate-source voltage ± 16 V VGS (2) 2. Guaranteed for test time ≤ 15 ms Gate-source voltage ± 18 V ID (3) 3. The value is rated according Rthj-c Drain current (continuous) at TC = 25 °C 55 A ID (3) Drain current (continuous) at TC=100 °C 36 A IDM (4) 4. Pulse width limited by safe operating area Drain current (pulsed) 60 A ID (5) 5. The value is rated according Rthj-pcb Drain current (continuous) at TC = 25 °C 15 A ID (5) Drain current (continuous) at TC=100 °C 9.4 A PTOT (5) Total dissipation at TC = 25 °C 4 W PTOT (3) Total dissipation at TC = 25 °C 60 W Derating factor 0.03 W/°C TJ Tstg Operating junction temperature Storage temperature -55 to 150 °C Table 3. Thermal resistance Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case (drain) 2.08 °C/W Rthj-pcb (1) 1. When mounted on FR-4 board of 1inch², 2oz Cu, t < 10 sec Thermal resistance junction-ambient 31.3 °C/W Table 4. Avalanche data Symbol Parameter Value Unit IAV Not-repetitive avalanche current (pulse width limited by Tj Max) 7.5 A EAS Single pulse avalanche energy (starting Tj = 25 °C, ID=IAV, VDD = 24 V, L=6 mH) 150 mJ |
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