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L55NH3LL 数据表(PDF) 5 Page - STMicroelectronics |
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L55NH3LL 数据表(HTML) 5 Page - STMicroelectronics |
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5 / 14 page ![]() STL55NH3LL Electrical characteristics 5/14 Table 7. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) tr td(off) tf Turn-on delay time Rise time Turn-off delay time Fall time VDD=15 V, ID= 7.5 A, RG=4.7 Ω, VGS=4.5 V (see Figure 18) 15 32 18 8.5 ns ns ns ns Table 8. Source drain diode Symbol Parameter Test conditions Min Typ. Max Unit ISD Source-drain current 15 A ISDM (1) 1. Pulse width limited by safe operating area Source-drain current (pulsed) 60 A VSD (2) 2. Pulsed: pulse duration=300 µs, duty cycle 1.5% Forward on voltage ISD=15 A, VGS=0 1.3 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD=15 A, di/dt = 100 A/µs, VDD=20 V, Tj=150 °C (see Figure 17) 24 17.4 1.45 ns nC A |
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