L55NH3LL datasheet(4/14 Pages) STMICROELECTRONICS

部件名	L55NH3LL

功能描述	N-channel 30 V, 0.0079 Ω, 15 A, PowerFLAT??(6x5) ultra low gate charge STripFET™Power MOSFET

PDF	14 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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4 / 14 page

Electrical characteristics

STL55NH3LL

4/14

Electrical characteristics

(TCASE=25°C unless otherwise specified)

Table 5.

On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

ID = 250 µA, VGS= 0

IDSS

Zero gate voltage drain

current (VGS = 0)

VDS = max rating,

VDS = max rating @125

°C

µA

IGSS

Gate body leakage current

(VDS = 0)

VGS = ±16 V

100

VGS(th)

Gate threshold voltage

VDS= VGS, ID = 250 µA

12.5

RDS(on)

Static drain-source on

resistance

VGS= 10 V, ID= 7.5 A

VGS= 8 V, ID= 7.5 A

VGS= 4.5 V, ID= 7.5 A

0.0079

0.009

0.0088

0.0115

Ω

Table 6.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 25 V, f=1 MHz,

VGS=0

965

285

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD=15 V, ID = 15 A

VGS =4.5 V

(see Figure 16)

3.7

Qgs1

Qgs2

Pre Vth gate-to-source

charge

Post Vth gate-to-source

charge

VDD=15 V, ID = 15 A

VGS =4.5 V

2.5

1.2

Gate input resistance

f=1 MHz Gate DC Bias = 0

Test signal level = 20 mV

open drain

0.5

1.5

2.5

Ω

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