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STS17NH3LL 数据表(PDF) 1 Page - STMicroelectronics |
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STS17NH3LL 数据表(HTML) 1 Page - STMicroelectronics |
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1 / 12 page  December 2007 Rev 3 1/12 12 STS17NH3LL N-channel 30 V - 0.004 Ω - 17 A - SO-8 STripFET™ Power MOSFET for DC-DC conversion Features ■ Optimal RDS(on) x Qg trade-off @ 4.5 V ■ Conduction losses reduced ■ Improved junction-case thermal resistance ■ Low threshold device Applications ■ Switching application Description This device utilizes the latest advanced design rules of ST’s proprietary STripFET™ technology. This process coupled to unique metallization techniques realizes the most advanced low voltage Power MOSFET in SO-8 ever produced. Figure 1. Internal schematic diagram Type VDSS RDS(on) ID STS17NH3LL 30V <0.0057 Ω 17A(1) 1. This value is rated according to Rthj-pcb SO-8 Table 1. Device summary Order code Marking Package Packaging STS17NH3LL 17H3LL- SO-8 Tape & reel www.st.com |
类似零件编号 - STS17NH3LL |
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类似说明 - STS17NH3LL |
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