STS17NH3LL datasheet(4/12 Pages) STMICROELECTRONICS

部件名	STS17NH3LL

功能描述	N-channel 30 V - 0.004 Ω - 17 A - SO-8 STripFET??Power MOSFET for DC-DC conversion

PDF	12 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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Electrical characteristics

STS17NH3LL

4/12

Electrical characteristics

(TCASE=25°C unless otherwise specified)

Table 5.

On/off states

Symbol

Parameter

Test conditions

Min

Typ.

Max

Unit

V(BR)DSS

Drain-source

breakdown voltage

ID = 250 µA, VGS = 0

IDSS

Zero gate voltage

drain current (VGS = 0)

VDS = Max rating

VDS = Max rating @125°C

µA

IGSS

Gate-body leakage

current (VDS = 0)

VGS = ± 16 V

±100

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 250 µA

RDS(on)

Static drain-source on

resistance

VGS = 10 V, ID = 8.5 A

VGS = 4.5 V, ID = 8.5 A

0.004

0.005

0.0057

0.0075

Ω

Table 6.

Dynamic

Symbol

Parameter

Test conditions

Min

Typ.

Max

Unit

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS=25 V, f=1 MHz

VGS = 0

1810

565

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD=15 V, ID=17 A

VGS=4.5 V

(see Figure 14)

4.8

5.3

Gate input resistance

f=1 MHz Gate DC Bias = 0

Test signal level = 20 mV

open drain

0.5

1.5

Ω

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