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STS17NH3LL 数据表(PDF) 5 Page - STMicroelectronics |
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STS17NH3LL 数据表(HTML) 5 Page - STMicroelectronics |
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5 / 12 page ![]() STS17NH3LL Electrical characteristics 5/12 Table 7. Switching times Symbol Parameter Test conditions Min Typ. Max Unit td(on) tr Turn-on delay time Rise time VDD = 15 V, ID = 8.5 A RG =4.7 Ω , VGS = 10 V (see Figure 16) 8 65 ns ns td(off) tf Turn-off delay time Fall time VDD = 15 V, ID = 8.5 A RG =4.7 Ω , VGS = 10 V (see Figure 16) 38 20 ns ns Table 8. Source drain diode Symbol Parameter Test conditions Min Typ. Max Unit ISD ISDM Source-drain current Source-drain current (pulsed) 17 68 A A VSD (1) 1. Pulsed: pulse duration=300µs, duty cycle 1.5% Forward on voltage ISD = 17 A, VGS = 0 1.3 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 17 A, di/dt = 100 A/µs VDD = 15 V, Tj = 25°C (see Figure 15) 22 32 1.9 ns nC A |
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