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THBT200S1 数据表(PDF) 1 Page - STMicroelectronics |
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THBT200S1 数据表(HTML) 1 Page - STMicroelectronics |
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1 / 7 page ![]() Application Specific Discretes A.S.D. ™ THBT200S1 TRANSIENT VOLTAGE SUPPRESSOR FOR SLIC PROTECTION ® DUAL BIDIRECTIONAL CROWBAR PROTECTION. PEAK PULSE CURRENT : -IPP = 35 A, 10/1000 µs. HOLDING CURRENT = 150 mA min BREAKDOWN VOLTAGE = 200 V min. BREAKOVER VOLTAGE = 290 V max. MONOLITHIC DEVICE. FEATURES February 1998 Ed: 2 1 2 3 4 NC Ti p Ri n g GN D SIP3 This monolithic protection device has been espe- cially designed to protect subscriber line cards.The THBT200S device is particularly suitable to protect ring generator relay against transient overvol- tages. DESCRIPTION SCHEMATIC DIAGRAM CCITT K20 : 10/700 µs 1kV 5/310 µs 25A VDE 0433 : 10/700 µs 2kV 5/310 µs 45A (*) VDE 0878 : 1.2/50 µs 1.5kV 1/20 µs 40A FCC part 68 : 2/10 µs 2.5kV 2/20 µs 80A (*) BELLCORE TR-NWT-001089 : 2/10 µs 2.5kV 2/10 µs 80A 10/1000 µs 1kV 10/1000 µs 35A (*) (*) with series resistors or PTC. COMPLIESWITHTHE FOLLOWINGSTANDARDS: TM: ASD is trademarks of SGS-THOMSON Microelectronics. 1/7 |
类似零件编号 - THBT200S1 |
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类似说明 - THBT200S1 |
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