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THBT200S1 数据表(PDF) 6 Page - STMicroelectronics |
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THBT200S1 数据表(HTML) 6 Page - STMicroelectronics |
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6 / 7 page ![]() I H [Tj ] I H [Tj =25°C] 0 20 40 60 80 100 120 140 0.0 0.2 0.4 0.6 0.8 1.0 T j (°C) Fig. 1 : Relative variation of holding current versus junction temperature. I (A) TSM 1E-2 1E-1 1E+0 1E+1 1E+2 1E+3 0 5 10 15 20 25 30 t(s) F=50Hz Tj initial=25 °C Fig. 2 : Surge peak current versus overload dura- tion. Fig. 3 : Peak on state voltage versus peak on state current (typical values). 1 10 100 200 10 100 1000 Fig. 4 : Capacitance versus reverse applied volt- age (typical values). ® THBT200S1 6/7 |
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