THBT200S1 datasheet(4/7 Pages) STMICROELECTRONICS

部件名	THBT200S1

功能描述	TRANSIENT VOLTAGE SUPPRESSOR FOR SLIC PROTECTION

PDF	7 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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REFERENCE TEST CIRCUIT 1 FOR IBO and VBO parameters :

FUNCTIONAL HOLDING CURRENT (IH) TEST CIRCUIT 2.

-VP

VBAT = - 48 V

Surge generator

D.U.T.

TEST PROCEDURE :

Pulse Test duration (tp = 20ms):

- For Bidirectional devices = Switch K is closed

- For Unidirectional devices = Switch K is open.

VOUT Selection

- Device with VBO

< 200 Volt

-VOUT = 250 VRMS,R1 = 140

Ω.

- Device with VBO

≥ 200 Volt

-VOUT = 480 VRMS,R2 = 240

Ω.

This is a GO-NOGO Test which allows to confirm the holding current (IH) level in a functional

test circuit.

TEST PROCEDURE :

1) Adjust the current level at the IH value by short circuiting the AK of the D.U.T.

2) Fire the D.U.T with a surge Current : Ipp = 10A , 10/1000

µs.

3) The D.U.T will come back off-state within 50 ms max.

THBT200S1

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THBT200S1 数据表(PDF) 4 Page - STMicroelectronics