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LPC2102 数据表(PDF) 21 Page - NXP Semiconductors |
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LPC2102 数据表(HTML) 21 Page - NXP Semiconductors |
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21 / 32 page ![]() LPC2101_02_03_3 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 03 — 7 October 2008 21 of 32 NXP Semiconductors LPC2101/02/03 Single-chip 16-bit/32-bit microcontrollers 7. Limiting values [1] The following applies to the limiting values: a) This product includes circuitry specifically designed for the protection of its internal devices from the damaging effects of excessive static charge. Nonetheless, it is suggested that conventional precautions be taken to avoid applying greater than the rated maximum. b) Parameters are valid over operating temperature range unless otherwise specified. All voltages are with respect to VSS unless otherwise noted. [2] Core and internal rail. [3] External rail. [4] On ADC related pins. [5] Including voltage on outputs in 3-state mode. [6] Only valid when the VDD(3V3) supply voltage is present. [7] Not to exceed 4.6 V. [8] Per supply pin. [9] The peak current is limited to 25 times the corresponding maximum current. [10] Per ground pin. [11] Dependent on package type. [12] Performed per AEC-Q100-002. [13] Performed per AEC-Q100-003. [14] Performed per AEC-Q100-011. Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).[1] Symbol Parameter Conditions Min Max Unit VDD(1V8) supply voltage (1.8 V) [2] −0.5 +2.5 V VDD(3V3) supply voltage (3.3 V) [3] −0.5 +3.6 V VDDA analog 3.3 V pad supply voltage −0.5 +4.6 V Vi(VBAT) input voltage on pin VBAT for the RTC −0.5 +4.6 V VIA analog input voltage [4] −0.5 +5.1 V VI input voltage 5 V tolerant I/O pins [5][6] −0.5 +6.0 V other I/O pins [5] −0.5 VDD + 0.5[7] V IDD supply current [8] - 100[9] mA ISS ground current [10] - 100[9] mA Tstg storage temperature [11] −65 +150 °C Ptot(pack) total power dissipation (per package) based on package heat transfer, not device power consumption - 1.5 W Vesd electrostatic discharge voltage Human Body Model (HBM) −4000 +4000 V[12] Machine Model (MM) −200 +200 V[13] Charged Device Model (CDM) −800 +800 V[14] |
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