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P89LPC954 数据表(PDF) 52 Page - NXP Semiconductors

部件名 P89LPC954
功能描述  8-bit microcontroller with accelerated two-clock 80C51 core 8 kB/16 kB 3 V byte-erasable flash with 10-bit ADC
PDF  69 Pages
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制造商  NXP [NXP Semiconductors]
网页  http://www.nxp.com
标志 NXP - NXP Semiconductors

P89LPC954 数据表(HTML) 52 Page - NXP Semiconductors

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P89LPC952_954_4
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 04 — 24 July 2008
52 of 69
NXP Semiconductors
P89LPC952/954
8-bit microcontroller with 10-bit ADC
[1]
Typical ratings are not guaranteed. The values listed are at room temperature, 3 V.
[2]
The IDD(oper),IDD(idle), and IDD(pd) specifications are measured using an external clock with the following functions disabled: comparators,
real-time clock, and watchdog timer.
[3]
The IDD(tpd) specification is measured using an external clock with the following functions disabled: comparators, real-time clock,
brownout detect, and watchdog timer.
[4]
See Section 9 “Limiting values” for steady state (non-transient) limits on IOL or IOH. If IOL/IOH exceeds the test condition, VOL/VOH may
exceed the related specification.
[5]
This specification can be applied to pins which have A/D input or analog comparator input functions when the pin is not being used for
those analog functions. When the pin is being used as an analog input pin, the maximum voltage on the pin must be limited to 4.0 V with
respect to VSS.
[6]
Pin capacitance is characterized but not tested.
[7]
Measured with port in quasi-bidirectional mode.
[8]
Measured with port in high-impedance mode.
[9]
Port pins source a transition current when used in quasi-bidirectional mode and externally driven from logic 1 to logic 0. This current is
highest when VI is approximately 2 V.
Ciss
input capacitance
[6] -
-
15
pF
IIL
LOW-level input current
VI = 0.4 V
[7] --
−80
µA
ILI
input leakage current
VI =VIL, VIH, or Vth(HL)
[8] --
±1
µA
ITHL
HIGH-LOW transition current
all ports; VI = 1.5 V at
VDD = 3.6 V
[9]
−30
-
−450
µA
RRST_N(int) internal pull-up resistance on
pin RST
pin RST
10
-
30
k
Vbo
brownout trip voltage
BOE = 1
2.4
-
2.7
V
Vref(bg)
band gap reference voltage
1.19
1.23
1.27
V
TCbg
band gap temperature
coefficient
-
10
20
ppm/
°C
Table 11.
Static characteristics …continued
VDD = 2.4 V to 3.6 V unless otherwise specified.
Tamb = −40 °C to +85 °C for industrial applications, unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ[1]
Max
Unit



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