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TXDV412 数据表(PDF) 1 Page - STMicroelectronics

部件名 TXDV412
功能描述  ALTERNISTORS
PDF  5 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

TXDV412 数据表(HTML) 1 Page - STMicroelectronics

  TXDV412 Datasheet HTML 1Page - STMicroelectronics TXDV412 Datasheet HTML 2Page - STMicroelectronics TXDV412 Datasheet HTML 3Page - STMicroelectronics TXDV412 Datasheet HTML 4Page - STMicroelectronics TXDV412 Datasheet HTML 5Page - STMicroelectronics  
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TXDV 412 ---> 812
March 1995
ALTERNISTORS
Symbol
Parameter
Value
Unit
IT(RMS)
RMS on-state current
(360
° conduction angle)
Tc = 90
°C12
A
ITSM
Non repetitive surge peak on-state current
( Tj initial = 25
°C )
tp = 2.5 ms
170
A
tp = 8.3 ms
125
tp = 10 ms
120
I2tI2t value
tp = 10 ms
72
A2s
dI/dt
Critical rate of rise of on-state current
Gate supply : IG = 500mA diG/dt = 1A/µs
Repetitive
F = 50 Hz
20
A/
µs
Non
Repetitive
100
Tstg
Tj
Storage and operating junction temperature range
- 40 to + 150
- 40 to + 125
°C
°C
Tl
Maximum lead temperature for soldering during 10 s at 4.5 mm
from case
260
°C
TO220AB
(Plastic)
A1
A2
G
.
VERY HIGH COMMUTATION : > 42.5 A/ms
(400Hz)
.
INSULATING VOLTAGE = 2500V(RMS)
(UL RECOGNIZED : E81734)
.
dV/dt : 500 V/
µs min
DESCRIPTION
Symbol
Parameter
TXDV
Unit
412
612
812
VDRM
VRRM
Repetitive peak off-state voltage
Tj = 125
°C
400
600
800
V
ABSOLUTE RATINGS (limiting values)
FEATURES
The TXDV 412 ---> 812 use a high performance
passivated glass alternistor technology. Featuring
very high commutation levels and high surge cur-
rent capability, this family is well adapted to power
control on inductive load (motor, transformer...)
1/5


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