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TXDV412 数据表(PDF) 2 Page - STMicroelectronics

部件名 TXDV412
功能描述  ALTERNISTORS
PDF  5 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

TXDV412 数据表(HTML) 2 Page - STMicroelectronics

  TXDV412 Datasheet HTML 1Page - STMicroelectronics TXDV412 Datasheet HTML 2Page - STMicroelectronics TXDV412 Datasheet HTML 3Page - STMicroelectronics TXDV412 Datasheet HTML 4Page - STMicroelectronics TXDV412 Datasheet HTML 5Page - STMicroelectronics  
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GATE CHARACTERISTICS (maximum values)
Symbol
Parameter
Value
Unit
Rth (j-a)
Junction to ambient
60
°C/W
Rth (j-c) DC Junction to case for DC
2.5
°C/W
Rth (j-c) AC Junction to case for 360
° conduction angle ( F= 50 Hz)
1.9
°C/W
Symbol
Test Conditions
Quadrant
Value
Unit
IGT
VD=12V
(DC)
RL=33Ω
Tj=25
°C
I-II-III
MAX
100
mA
VGT
VD=12V
(DC)
RL=33Ω
Tj=25
°C
I-II-III
MAX
1.5
V
VGD
VD=VDRM RL=3.3kΩ
Tj=110
°C
I-II-III
MIN
0.2
V
tgt
VD=VDRM IG = 500mA
dIG/dt = 3A/µs
Tj=25
°C
I-II-III
TYP
2.5
µs
IL
IG=1.2 IGT
Tj=25
°C
I-III
TYP
100
mA
II
200
IH *
IT= 500mA gate open
Tj=25
°C
MAX
100
mA
VTM *ITM= 17A tp= 380µs
Tj=25
°C
MAX
1.95
V
IDRM
IRRM
VDRM Rated
VRRM Rated
Tj=25
°C
MAX
0.01
mA
Tj=110
°C
MAX
2
dV/dt *
Linear slope up to VD=67%VDRM
gate open
Tj=110
°C
MIN
500
V/
µs
(dI/dt)c *
(dV/dt)c = 200V/
µs
Tj=110
°C
MIN
10
A/ms
(dV/dt)c = 10V/
µs42.5
* For either polarity of electrode A2 voltage with reference to electrode A1.
PG (AV) = 1W
PGM = 10W (tp = 20 µs)
IGM = 4A (tp = 20 µs)
VGM = 16V (tp = 20 µs).
ELECTRICAL CHARACTERISTICS
THERMAL RESISTANCES
TXDV 412 ---> 812
2/5



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