375

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10 11

12

0

2

4

6

8

10

12

14

16

18

20

180

O

=180

o

=120

o

=90

o

=60

o

=30

o

T(RMS)

I(A)

P(W)

Fig.1 : Maximum RMS power dissipation versus RMS

on-state current (F=50Hz).

(Curves are cut off by (dI/dt)c limitation)

0

20

40

60

80

100

120

140

0

2

4

6

8

10

12

14

16

18

20

-90

-95

-100

-105

-110

-115

-120

-125

P(W)

Tamb(C)

o

Tcase ( C)

o

Rth = 0 C/W

1C/W

2C/W

4C/W

o

o

o

o

Fig.2 : Correlation between maximum RMS power

dissipation and maximum allowable temperatures (Tamb

and Tcase) for different thermal resistances heatsink +

contact.

0

10203040 5060708090 100 110 120 130

0

2

4

6

8

10

12

14

=180

o

Tcase( C)

o

I(A)

T(RMS)

Fig.3 : RMS on-state current versus case temperature.

1E-3

1E-2

1E-1

1E+0

1E+1

1E +2 5E+2

0.01

0.1

1

Zth/Rth

Zth(j-c)

Zth(j-a)

tp(s)

Fig.4 : Relative variation of thermal impedance versus

pulse duration.

Fig.5 : Relative variation of gate trigger current and

holding current versus junction temperature.

Fig.6 : Non Repetitive surge peak on-state current

versus number of cycles.

TXDV 412 ---> 812

3/5