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LTC2926IGN 数据表(PDF) 12 Page - Linear Technology |
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LTC2926IGN 数据表(HTML) 12 Page - Linear Technology |
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12 / 28 page ![]() LTC2926 12 2926fa 0.8V 2926 F06 FB1 RAMPBUF TRACK1 GND VCC 0.8V VCC 1x D1 S1 VCC + 4.9V SGATE2 10 µA 10 µA CHARGE PUMP TO RSGATE PIN REMOTE SENSE SWITCH 10 µA 10 µA CHARGE PUMP SGATE1 – + – + VCC + 4.9V SGATE1 – + RAMP + 4.9V MGATE – + – + 10 µA 10 µA CHARGE PUMP 1.23V – + ON ON/OFF MGATE CMGATE RAMP OUT SUPPLY MODULE SENSE RX1 OUT SUPPLY MODULE MASTER SLAVE1 RFB1 RFA1 Q0 Q1 RTB1 RTA1 Figure 6. Simplified Functional Block Diagram Optional Master Supply MOSFET Figure 7 illustrates how an optional external N-channel MOSFET (device Q0) can ramp up a supply that doubles as the master signal. The MOSFET’s gate is tied to the MGATE pin and its source is tied to the RAMP pin. The MGATE pin sources or sinks 10µA to ramp the MOSFET’s gate up or down at a rate set by the external capacitor connected to the MGATE pin. The series MOSFET controls any supply with an output voltage between 0V and VCC. To compensate for voltage drop across the master supply MOSFET, add an optional external remote sense switch (device Q3 in Figure 7) connected between RAMP and the sense input of the master voltage supply module. Tie the gate of the external switch MOSFET to the RSGATE pin for automatic remote sense switching. APPLICATIO S I FOR ATIO |
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