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SSM2310 数据表(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH

部件名 SSM2310
功能描述  N-Channel Enhancement Mode Power Mos.FET
PDF  4 Pages
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制造商  SECOS [SeCoS Halbleitertechnologie GmbH]
网页  http://www.secosgmbh.com
标志 SECOS - SeCoS Halbleitertechnologie GmbH

SSM2310 数据表(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH

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Elektronische Bauelemente
SSM2310
3A, 60V,RDS(ON) 90m
N-Channel Enhancement Mode Power Mos.FET
Ω
Description
The SSM2310 utilized advanced processing techniques to
achieve the lowest possible on-resistance, extremely
Features
* Simple Drive Requirement
* Small Package Outline
efficient and cost-effectiveness device.
The SSM2310 is universally used for all commercial-
industrial surface mount applications.
Absolute Maximum Ratings
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @4.5V
Continuous Drain Current, VGS @4.5V
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
Thermal Resistance Junction-ambient
A
V
V
A
A
ID@TA=70
/W
C
W/ C
C
W
VDS
VGS
ID@TA=25
IDM
PD@TA=25
Tj, Tstg
Rthj-a
60
±20
10
3.0
2.3
2.7
0.02
-55~+150
45
Parameter
Symbol
Ratings
Unit
Parameter
Symbol
Ratings
Unit
3
3
3
1,2
Max.
o
o
o
C
o
C
o
C
o
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
SOT-223
01-Jun-2002 Rev. A
Page 1 of 4
Thermal Data
Millimeter
Millimeter
REF.
Min.
Max.
REF.
Min.
Max.
A
6.70
7.30
B
13°TYP.
C
2.90
3.10
J
2.30 REF.
D
0.02
0.10
1
6.30
6.70
E
10°
2
6.30
6.70
I
0.60
0.80
3
3.30
3.70
H
0.25
0.35
4
3.30
3.70
5
1.40
1.80
S
D
G
2 3 1 0
DateCode
S
D
G
RoHS Compliant Product


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