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SSM2310 数据表(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH

部件名 SSM2310
功能描述  N-Channel Enhancement Mode Power Mos.FET
PDF  4 Pages
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制造商  SECOS [SeCoS Halbleitertechnologie GmbH]
网页  http://www.secosgmbh.com
标志 SECOS - SeCoS Halbleitertechnologie GmbH

SSM2310 数据表(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH

  SSM2310 Datasheet HTML 1Page - SeCoS Halbleitertechnologie GmbH SSM2310 Datasheet HTML 2Page - SeCoS Halbleitertechnologie GmbH SSM2310 Datasheet HTML 3Page - SeCoS Halbleitertechnologie GmbH SSM2310 Datasheet HTML 4Page - SeCoS Halbleitertechnologie GmbH  
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Source-Drain Diode
01-Jun-2002 Rev. A
Page 2 of 4
Elektronische Bauelemente
SSM2310
3A, 60V,RDS(ON) 90m
N-Channel Enhancement Mode Power Mos.FET
Ω
Notes: 1.
Parameter
Symbol
Max.
Typ.
Test Condition
Min.
Unit
Forward On Voltage
Reverse Recovery Time
Trr
_
Reverse Recovery Change
_
Qrr
nC
nS
25
26
VSD
_
_
IS=1.2A, VGS=0V.
V
1.2
2
_
_
IS=3A, VGS=0V.
dl/dt=100A/us
2.Pulse width 300us, dutycycle 2%.
≦
≦
3.Surface mounted on 1 in copper pad of FR4 board;120 C/W when mounted on min. copper pad.
2
o
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
Electrical Characteristics( Tj=25 C Unless otherwise specified)
o
6
1.6
3
6
5
16
3
55
40
nC
nS
pF
VGS=0V
VDS=25V
f=1.0MHz
VDD=30V
ID=1A
VGS=10V
RG=3.3
RD=30
Ω
Ω
ID=3A
VDS=48V
VGS= 4.5V
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
60
0.05
1.0
3.0
100
10
25
90
120
±
V
V/
Reference to 25C, ID=1m
o
oC
V
nA
uA
uA
m
5
Ω
VGS=10V, ID=3A
VGS=4.5V, ID=2A
VGS=0V, ID=250uA
VGS= 20V
±
VDS=60V,VGS=0
VDS=48V,VGS=0
VDS=VGS, ID=250uA
_
_
_
_
_
_
_
_
_
_
_
_
_
S
VDS=5V, ID=3A
_
_
_
_
490
10
780
A
Total Gate Charge
Crss
Qg
Qgs
Qgd
Td(ON)
Td(Off)
Tr
Ciss
Coss
Tf
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
BVDSS
BVDS/ Tj
IDSS
Parameter
Symbol
Max.
Typ.
Test Condition
Min.
Unit
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Gate-Source Leakage Current
Drain-Source Leakage Current (Tj=25 )
Static Drain-Source On-Resistance
Drain-Source Leakage Current(Tj=70 C)
VGS(th)
IGSS
Forward Transconductance
Gfs
oC
o
2
2
RDS(ON)
Pulse width limited by Max. junction temperature.



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