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SSM2310 数据表(PDF) 3 Page - SeCoS Halbleitertechnologie GmbH |
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SSM2310 数据表(HTML) 3 Page - SeCoS Halbleitertechnologie GmbH |
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3 / 4 page ![]() 01-Jun-2002 Rev. A Page 3 of 4 Elektronische Bauelemente SSM2310 3A, 60V,RDS(ON) 90m N-Channel Enhancement Mode Power Mos.FET Ω http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual Characteristics Curve Fig 5. Forward Characteristics of Reverse Diode Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 6. Gate Threshold Voltage v.s. Junction Temperature |
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