TL052IP datasheet(32/65 Pages) TI

32 / 65 page

TL05x, TL05xA, TL05xY

ENHANCED-JFET LOW-OFFSET

OPERATIONAL AMPLIFIERS

SLOS178 – FEBRUARY 1997

POST OFFICE BOX 655303

• DALLAS, TEXAS 75265

PARAMETER MEASUREMENT INFORMATION

VCC +

VCC –

NOTE A: CL includes fixture capacitance.

(see Note A)

and Overshoot Test Circuit

. Slew Rate, Rise/Fall Time,

Figure 1

Overshoot

10%

90%

Waveform

. Rise Time and Overshoot

Figure 2

VCC –

VCC+

2 k

Ω

. Noise-Voltage Test Circuit

Figure 3

Figure 4

VCC –

VCC +

(see Note A)

10 k

Ω

100

Ω

NOTE A: CL includes fixture capacitance.

Phase-Margin Test Circuit

. Unity-Gain Bandwidth and

typical values

Typical values as presented in this data sheet

represent the median (50% point) of device

parametric performance.

input bias and offset current

At the picoamp-bias-current level typical of the

TL05x and TL05xA, accurate measurement of the

bias current becomes difficult. Not only does this

measurement require a picoammeter, but test

socket leakages can easily exceed the actualdevice bias currents. To accurately measure these small currents,

Texas Instruments uses a two-step process. The socket leakage is measured using picoammeters with bias

voltages applied but with no device in the socket. The device is then inserted in the socket, and a second test

that measures both the socket leakage and the device input bias current is performed. The two measurements

are then subtracted algebraically to determine the bias current of the device.

noise

Because of the increasing emphasis on low noise levels in many of today’s applications, the input noise voltage

density is sample tested at f = 1 kHz. Texas Instruments also has additional noise testing capability to meet

specific application requirements. Please contact the factory for details.

Figure 5. Input-Bias and Offset-Current Test Circuit

VCC +

VCC –

Ground Shield

TL052IP 数据表(PDF) 32 Page - Texas Instruments

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