T610H datasheet(2/9 Pages) STMICROELECTRONICS

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Characteristics

T610H

2/9

Doc ID 15713 Rev 1

Characteristics

Table 2.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

IT(RMS)

On-state rms current (full sine wave)

Tc = 138 °C

ITSM

Non repetitive surge peak on-state

current (full cycle, Tj initial = 25 °C)

F = 60 Hz

t = 16.7 ms

F = 50 Hz

t = 20 ms

I²tI²t Value for fusing

tp = 10 ms

A²s

dI/dt

Critical rate of rise of on-state current

IG = 2 x IGT , tr ≤ 100 ns

F = 120 Hz

Tj = 150 °C

A/µs

VDSM/VRSM

Non repetitive surge peak off-state

voltage

tp = 10 ms

Tj = 25 °C

VDRM/VRRM

+ 100

IGM

Peak gate current

tp = 20 µs

Tj = 150 °C

PG(AV)

Average gate power dissipation

Tj = 150 °C

Tstg

Storage junction temperature range

Operating junction temperature range

- 40 to + 150

°C

Table 3.

Electrical characteristics (Tj = 25 °C, unless otherwise specified)

Symbol

Test conditions

Quadrant

Min.

Max.

Unit

IGT

VD = 12 V RL = 33 Ω

I - II - III

VGT

I - II - III

1.0

VGD

VD = VDRM, RL = 3.3 kΩ

I - II - III

0.15

(1)

IT = 100 mA

IG = 1.2 IGT

I - III

dV/dt (1)

VD = 67% VDRM, gate open, Tj = 150 °C

V/µs

(dI/dt)c (1)

Logic level, 0.1 V/µs, Tj = 150 °C

8.7

A/ms

Logic level, 15 V/µs, Tj = 150 °C

2.3

For both polarities of A2 referenced to A1.

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