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T610H 数据表(PDF) 5 Page - STMicroelectronics

部件名 T610H
功能描述  High temperature 6 A sensitive TRIACs
PDF  9 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

T610H 数据表(HTML) 5 Page - STMicroelectronics

  T610H Datasheet HTML 1Page - STMicroelectronics T610H Datasheet HTML 2Page - STMicroelectronics T610H Datasheet HTML 3Page - STMicroelectronics T610H Datasheet HTML 4Page - STMicroelectronics T610H Datasheet HTML 5Page - STMicroelectronics T610H Datasheet HTML 6Page - STMicroelectronics T610H Datasheet HTML 7Page - STMicroelectronics T610H Datasheet HTML 8Page - STMicroelectronics T610H Datasheet HTML 9Page - STMicroelectronics  
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T610H
Characteristics
Doc ID 15713 Rev 1
5/9
Figure 11.
Relative variation of critical rate of
decrease of main current versus
reapplied dV/dt (typical values)
Figure 12.
Relative variation of static dV/dt
immunity versus junction
temperature
(dI/dt)
c [(dV/dt)c ] / Specified (dI/dt)c
0
1
2
3
4
0.1
1.0
10.0
100.0
(dV/dt)C (V/µs)
dV/dt [T
j]/ dV/dt[T j=150 °C]
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
25
50
75
100
125
150
V
D=VR=400 V
Tj(°C)
Figure 13.
Variation of leakage current versus
junction temperature for different
values of blocking voltage
Figure 14.
Acceptable case to ambient thermal
resistance versus repetitive peak
off-state voltage
IDRM/IRRM [Tj;V DRM/VRRM]/IDRM/IRRM [Tj=150°C; 600V]
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
25
50
75
100
125
150
V
DRM=VRRM=400 V
V
DRM=VRRM=400 V
V
DRM=VRRM=600 V
V
DRM=VRRM=600 V
V
DRM=VRRM=200 V
V
DRM=VRRM=200 V
Tj(°C)
R
th(c-a)(°C/W)
0
5
10
15
20
25
30
35
40
45
50
55
60
65
70
200
300
400
500
600
R
th(j-c)=1.8 °C/W
T
J=150 °C
VAC PEAK(V)



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