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T610H 数据表(PDF) 4 Page - STMicroelectronics

部件名 T610H
功能描述  High temperature 6 A sensitive TRIACs
PDF  9 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

T610H 数据表(HTML) 4 Page - STMicroelectronics

  T610H Datasheet HTML 1Page - STMicroelectronics T610H Datasheet HTML 2Page - STMicroelectronics T610H Datasheet HTML 3Page - STMicroelectronics T610H Datasheet HTML 4Page - STMicroelectronics T610H Datasheet HTML 5Page - STMicroelectronics T610H Datasheet HTML 6Page - STMicroelectronics T610H Datasheet HTML 7Page - STMicroelectronics T610H Datasheet HTML 8Page - STMicroelectronics T610H Datasheet HTML 9Page - STMicroelectronics  
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Characteristics
T610H
4/9
Doc ID 15713 Rev 1
Figure 5.
Relative variation of gate trigger
current and voltage versus junction
temperature (typical values)
Figure 6.
Relative variation of holding and
latching current versus junction
temperature (typical values)
I
GT,VGT[Tj]/ IGT,VGT[Tj=25 °C]
0.0
0.5
1.0
1.5
2.0
2.5
-50
-25
0
25
50
75
100
125
150
IGTQ1-Q2
VGT Q1- Q2 -Q3
IGT Q3
Tj(°C)
I
H,IL [Tj]/ IH,IL [Tj=25 °C]
0.0
0.5
1.0
1.5
2.0
-50
-25
0
25
50
75
100
125
150
IH
IL
Tj(°C)
Figure 7.
Surge peak on-state current
versus number of cycles
Figure 8.
Non-repetitive surge peak on-state
current and corresponding value
of I2t
I
TSM(A)
0
5
10
15
20
25
30
35
40
45
50
55
60
65
1
10
100
1000
Non repetitive
T
j initial=25 °C
One cycle
t=20ms
Repetitive
T
C=138 °C
Number of cycles
I
TSM(A), I²t (A²s)
1
10
100
1000
0.01
0.10
1.00
10.00
T
j initial=25 °C
dI/dt limitation: 50 A/µs
I
TSM
I²t
tP(ms)
Sinusoidal pulse width tp < 10 ms
Figure 9.
On-state characteristics
(maximum values)
Figure 10.
Relative variation of critical rate of
decrease of main current versus
junction temperature
ITM (A)
1
10
100
012
345
Tj=25 °C
Tj=150 °C
T
j max :
V
to = 0.80 V
R
d = 62 mΩ
VTM (V)
(dI/dt)C [Tj]/ (dI/dt)c [Tj=150 °C]
0
1
2
3
4
5
6
7
8
9
10
11
25
50
75
100
125
150
Tj(°C)



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