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APTGT50TL601G 数据表(PDF) 5 Page - Microsemi Corporation

部件名 APTGT50TL601G
功能描述  Three level inverter Trench Field Stop IGBT Power Module
PDF  7 Pages
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制造商  MICROSEMI [Microsemi Corporation]
网页  http://www.microsemi.com
标志 MICROSEMI - Microsemi Corporation

APTGT50TL601G 数据表(HTML) 5 Page - Microsemi Corporation

  APTGT50TL601G Datasheet HTML 1Page - Microsemi Corporation APTGT50TL601G Datasheet HTML 2Page - Microsemi Corporation APTGT50TL601G Datasheet HTML 3Page - Microsemi Corporation APTGT50TL601G Datasheet HTML 4Page - Microsemi Corporation APTGT50TL601G Datasheet HTML 5Page - Microsemi Corporation APTGT50TL601G Datasheet HTML 6Page - Microsemi Corporation APTGT50TL601G Datasheet HTML 7Page - Microsemi Corporation  
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APTGT50TL601G
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Output Characteristics (VGE=15V)
TJ=25°C
TJ=25°C
TJ=125°C
TJ=150°C
0
20
40
60
80
100
00.5
11.5
22.5
3
VCE (V)
Output Characteristics
VGE=15V
VGE=13V
VGE=19V
VGE=9V
0
20
40
60
80
100
0
0.5
1
1.5
2
2.5
3
3.5
VCE (V)
TJ = 150°C
Transfert Characteristics
TJ=25°C
TJ=25°C
TJ=150°C
0
20
40
60
80
100
5
6
7
8
9
101112
VGE (V)
Energy losses vs Collector Current
Eon
Eoff
0
0.5
1
1.5
2
2.5
3
3.5
0
20
40
60
80
100
IC (A)
VCE = 300V
VGE = 15V
RG = 8.2Ω
TJ = 150°C
Eon
Eoff
0
0.5
1
1.5
2
2.5
3
5
15
253545
5565
Gate Resistance (ohms)
VCE = 300V
VGE =15V
IC = 50A
TJ = 150°C
Switching Energy Losses vs Gate Resistance
Reverse Bias Safe Operating Area
0
25
50
75
100
125
0
100 200 300 400 500 600 700
VCE (V)
VGE=15V
TJ=150°C
RG=8.2Ω
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.2
0.4
0.6
0.8
1
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration in Seconds



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