| 数据搜索系统,热门电子元器件搜索 |
|
APTGT50TL601G 数据表(PDF) 6 Page - Microsemi Corporation |
|
|
|||||||||||||||||||||||||||||
APTGT50TL601G 数据表(HTML) 6 Page - Microsemi Corporation |
|
6 / 7 page ![]() APTGT50TL601G www.microsemi.com 6- 7 CR1 to CR4 Typical performance curve Energy losses vs Collector Current 0 0.25 0.5 0.75 1 0 10 203040 5060 IF (A) VCE = 300V VGE = 15V RG = 10Ω TJ = 150°C 0 0.25 0.5 0.75 1 0 1020 3040 50 60 70 Gate Resistance (ohms) VCE = 300V VGE =15V IC = 30A TJ = 150°C Switching Energy Losses vs Gate Resistance maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.9 0.7 0.5 0.3 0.1 0.05 Single Pulse 0 0.5 1 1.5 2 2.5 3 0.00001 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration in Seconds Forward Characteristic of diode TJ=25°C TJ=150°C 0 10 20 30 40 50 60 0 0.4 0.8 1.2 1.6 2 2.4 VF (V) |
|
|
链接网址 |
| ALLDATASHEET是否为您带来帮助? [ DONATE ] |
关于 Alldatasheet | 广告服务 | 联系我们 | 隐私政策 | 数据表链接 | 链接交换 | 制造商名单 All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |