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APTGT50TL601G 数据表(PDF) 2 Page - Microsemi Corporation

部件名 APTGT50TL601G
功能描述  Three level inverter Trench Field Stop IGBT Power Module
PDF  7 Pages
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制造商  MICROSEMI [Microsemi Corporation]
网页  http://www.microsemi.com
标志 MICROSEMI - Microsemi Corporation

APTGT50TL601G 数据表(HTML) 2 Page - Microsemi Corporation

  APTGT50TL601G Datasheet HTML 1Page - Microsemi Corporation APTGT50TL601G Datasheet HTML 2Page - Microsemi Corporation APTGT50TL601G Datasheet HTML 3Page - Microsemi Corporation APTGT50TL601G Datasheet HTML 4Page - Microsemi Corporation APTGT50TL601G Datasheet HTML 5Page - Microsemi Corporation APTGT50TL601G Datasheet HTML 6Page - Microsemi Corporation APTGT50TL601G Datasheet HTML 7Page - Microsemi Corporation  
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APTGT50TL601G
www.microsemi.com
2- 7
All ratings @ Tj = 25°C unless otherwise specified
Q1 to Q4 Electrical Characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
ICES
Zero Gate Voltage Collector Current
VGE = 0V, VCE = 600V
250
µA
Tj = 25°C
1.5
1.9
VCE(sat)
Collector Emitter Saturation Voltage
VGE =15V
IC = 50A
Tj = 150°C
1.7
V
VGE(th)
Gate Threshold Voltage
VGE = VCE , IC = 600µA
5.0
5.8
6.5
V
IGES
Gate – Emitter Leakage Current
VGE = 20V, VCE = 0V
600
nA
Q1 to Q4 Dynamic Characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
Cies
Input Capacitance
3150
Coes
Output Capacitance
200
Cres
Reverse Transfer Capacitance
VGE = 0V
VCE = 25V
f = 1MHz
95
pF
QG
Gate charge
VGE=±15V, IC=50A
VCE=300V
0.5
µC
Td(on)
Turn-on Delay Time
110
Tr
Rise Time
45
Td(off)
Turn-off Delay Time
200
Tf
Fall Time
Inductive Switching (25°C)
VGE = ±15V
VBus = 300V
IC = 50A
RG = 8.2Ω
40
ns
Td(on)
Turn-on Delay Time
120
Tr
Rise Time
50
Td(off)
Turn-off Delay Time
250
Tf
Fall Time
Inductive Switching (150°C)
VGE = ±15V
VBus = 300V
IC = 50A
RG = 8.2Ω
60
ns
Tj = 25°C
0.3
Eon
Turn-on Switching Energy
Tj = 150°C
0.43
mJ
Tj = 25°C
1.35
Eoff
Turn-off Switching Energy
VGE = ±15V
VBus = 300V
IC = 50A
RG = 8.2Ω
Tj = 150°C
1.75
mJ
Isc
Short Circuit data
VGE ≤15V ; VBus = 360V
tp ≤ 6µs ; Tj = 150°C
250
A
RthJC
Junction to Case Thermal Resistance
0.85
°C/W



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