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STM32F102C4T6ATR 数据表(PDF) 59 Page - STMicroelectronics |
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STM32F102C4T6ATR 数据表(HTML) 59 Page - STMicroelectronics |
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59 / 69 page ![]() STM32F102x4, STM32F102x6 Electrical characteristics Doc ID 15057 Rev 3 59/69 Note: ADC accuracy vs. negative injection current: Injecting a negative current on any of the standard (non-robust) analog pins should be avoided as this significantly reduces the accuracy of the conversion being performed on another analog pin. It is recommended to add a Schottky diode (pin to ground) to standard analog pins that may potentially inject negative current. Any positive injection current within the limits specified for IINJ(PIN) and IINJ(PIN) in Section 5.3.12 does not affect the ADC accuracy. Table 45. RAIN max for fADC = 12 MHz (1) 1. Data guaranteed by design, not tested in production. Ts (cycles) tS (µs) RAIN max (k) 1.5 0.13 0.4 7.5 0.63 5.9 13.5 1.13 11.4 28.5 2.38 25.2 41.5 3.46 37.2 55.5 4.63 50 71.5 5.96 NA 239.5 19.96 NA Table 46. ADC accuracy - limited test conditions(1) 1. ADC DC accuracy values are measured after internal calibration. Symbol Parameter Test conditions Typ Max(2) 2. Based on characterization, not tested in production. Unit ET Total unadjusted error fPCLK2 = 48 MHz, fADC = 12 MHz, RAIN < 10 k, VDDA = 3 V to 3.6 V TA = 25 °C Measurements made after ADC calibration ±1.3 ±2 LSB EO Offset error ±1 ±1.5 EG Gain error ±0.5 ±1.5 ED Differential linearity error ±0.7 ±1 EL Integral linearity error ±0.8 ±1.5 Table 47. ADC accuracy(1) (2) 1. ADC DC accuracy values are measured after internal calibration. 2. Better performance could be achieved in restricted VDD, frequency and temperature ranges. Symbol Parameter Test conditions Typ Max(3) 3. Based on characterization, not tested in production. Unit ET Total unadjusted error fPCLK2 = 48 MHz, fADC = 12 MHz, RAIN < 10 k, VDDA = 2.4 V to 3.6 V Measurements made after ADC calibration ±2 ±5 LSB EO Offset error ±1.5 ±2.5 EG Gain error ±1.5 ±3 ED Differential linearity error ±1 ±2 EL Integral linearity error ±1.5 ±3 |
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