数据搜索系统，热门电子元器件搜索
  Chinese  ▼
ALLDATASHEETCN.COM

X  

预览 PDF HTML

STM32F102C4T6ATR 数据表(PDF) 44 Page - STMicroelectronics

部件名 STM32F102C4T6ATR
功能描述  Low-density USB access line, ARM-based 32-bit MCU with 16/32 KB Flash, USB FS interface, 5 timers, ADC & 5 communication interfaces
PDF  69 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STM32F102C4T6ATR 数据表(HTML) 44 Page - STMicroelectronics

Back Button STM32F102C4T6ATR Datasheet HTML 40Page - STMicroelectronics STM32F102C4T6ATR Datasheet HTML 41Page - STMicroelectronics STM32F102C4T6ATR Datasheet HTML 42Page - STMicroelectronics STM32F102C4T6ATR Datasheet HTML 43Page - STMicroelectronics STM32F102C4T6ATR Datasheet HTML 44Page - STMicroelectronics STM32F102C4T6ATR Datasheet HTML 45Page - STMicroelectronics STM32F102C4T6ATR Datasheet HTML 46Page - STMicroelectronics STM32F102C4T6ATR Datasheet HTML 47Page - STMicroelectronics STM32F102C4T6ATR Datasheet HTML 48Page - STMicroelectronics Next Button
Zoom Inzoom in Zoom Outzoom out
 44 / 69 page
background image
Electrical characteristics
STM32F102x4, STM32F102x6
44/69
Doc ID 15057 Rev 3
5.3.9
Memory characteristics
Flash memory
The characteristics are given at TA = –40 to 85 °C unless otherwise specified.
Table 28.
Flash memory endurance and data retention
5.3.10
EMC characteristics
Susceptibility tests are performed on a sample basis during device characterization.
tLOCK
PLL lock time
200
µs
Jitter
Cycle-to-cycle jitter
300
ps
1.
Based on characterization, not tested in production.
2.
Take care of using the appropriate multiplier factors so as to have PLL input clock values compatible with
the range defined by fPLL_OUT.
Table 26.
PLL characteristics (continued)
Symbol
Parameter
Value
Unit
Min(1)
Typ
Max(1)
Table 27.
Flash memory characteristics
Symbol
Parameter
Conditions
Min(1)
1.
Guaranteed by design, not tested in production.
Typ
Max(1)
Unit
tprog
16-bit programming time
TA–40 to +85 °C
40
52.5
70
µs
tERASE
Page (1 KB) erase time
TA –40 to +85 °C
20
40
ms
tME
Mass erase time
TA –40 to +85 °C
20
40
ms
IDD
Supply current
Read mode
fHCLK = 48 MHz with 2
wait states, VDD = 3.3 V
20
mA
Write / Erase modes
fHCLK = 48 MHz, VDD =
3.3 V
5mA
Power-down mode / Halt,
VDD = 3.0 to 3.6 V
50
µA
Vprog
Programming voltage
2
3.6
V
Symbol
Parameter
Conditions
Value
Unit
Min(1)
1.
Based on characterization not tested in production.
Typ
Max
NEND
Endurance
10
kcycles
tRET
Data retention
TA = 85 °C, 1000 cycles
30
Years



Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69


数据表 下载

Go To PDF Page


链接网址



ALLDATASHEET是否为您带来帮助?  [ DONATE ] 

关于 Alldatasheet   |   广告服务   |   联系我们   |   隐私政策   |   数据表链接    |   链接交换   |   制造商名单
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com