| 数据搜索系统,热门电子元器件搜索 |
|
STM32F103CBU6TR 数据表(PDF) 89 Page - STMicroelectronics |
|
|
|||||||||||||||||||||||||||||
STM32F103CBU6TR 数据表(HTML) 89 Page - STMicroelectronics |
|
89 / 92 page ![]() STM32F103x8, STM32F103xB Revision history Doc ID 13587 Rev 11 89/92 14-Mar-2008 5 Figure 2: Clock tree on page 20 added. Maximum TJ value given in Table 8: Thermal characteristics on page 35. CRC feature added (see CRC (cyclic redundancy check) calculation unit on page 9 and Figure 9: Memory map on page 31 for address). IDD modified in Table 16: Typical and maximum current consumptions in Stop and Standby modes. ACCHSI modified in Table 24: HSI oscillator characteristics on page 52, note 2 removed. PD, TA and TJ added, tprog values modified and tprog description clarified in Table 28: Flash memory characteristics on page 53. tRET modified in Table 29: Flash memory endurance and data retention. VNF(NRST) unit corrected in Table 37: NRST pin characteristics on page 60. Table 41: SPI characteristics on page 64 modified. IVREF added to Table 45: ADC characteristics on page 68. Table 47: ADC accuracy - limited test conditions added. Table 48: ADC accuracy modified. LQFP100 package specifications updated (see Section 6: Package characteristics on page 73). Recommended LQFP100, LQFP 64, LQFP48 and VFQFPN36 footprints added (see Figure 40, Figure 42, Figure 46 and Figure 36). Section 6.2: Thermal characteristics on page 82 modified, Section 6.2.1 and Section 6.2.2 added. Appendix A: Important notes on page 81 removed. 21-Mar-2008 6 Small text changes. Figure 9: Memory map clarified. In Table 29: Flash memory endurance and data retention: –NEND tested over the whole temperature range – cycling conditions specified for tRET –tRET min modified at TA = 55 °C V25, Avg_Slope and TL modified in Table 49: TS characteristics. CRC feature removed. 22-May-2008 7 CRC feature added back. Small text changes. Section 1: Introduction modified. Section 2.2: Full compatibility throughout the family added. IDD at TA max = 105 °C added to Table 16: Typical and maximum current consumptions in Stop and Standby modes on page 42. IDD_VBAT removed from Table 21: Typical current consumption in Standby mode on page 47. Values added to Table 40: SCL frequency (fPCLK1= 36 MHz.,VDD = 3.3 V) on page 63. Figure 27: SPI timing diagram - slave mode and CPHA = 0 on page 65 modified. Equation 1 corrected. tRET at TA = 105 °C modified in Table 29: Flash memory endurance and data retention on page 54. VUSB added to Table 43: USB DC electrical characteristics on page 67. Figure 47: LQFP100 PD max vs. TA on page 84 modified. Axx option added to Table 57: Ordering information scheme on page 85. Table 58. Document revision history (continued) Date Revision Changes |
|
链接网址 |
| ALLDATASHEET是否为您带来帮助? [ DONATE ] |
关于 Alldatasheet | 广告服务 | 联系我们 | 隐私政策 | 数据表链接 | 链接交换 | 制造商名单 All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |