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MCP6566UT-E/MS 数据表(PDF) 3 Page - Microchip Technology |
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MCP6566UT-E/MS 数据表(HTML) 3 Page - Microchip Technology |
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3 / 44 page ![]() © 2009 Microchip Technology Inc. DS22143B-page 3 MCP6566/6R/6U/7/9 1.0 ELECTRICAL CHARACTERISTICS 1.1 Maximum Ratings* VDD - VSS ....................................................................... 6.5V Open-Drain Output.............................................VSS + 10.5V All other inputs and outputs...........VSS – 0.3V to VDD + 0.3V Difference Input voltage ......................................|VDD - VSS| Output Short Circuit Current .................................... ±25 mA Current at Input Pins .................................................. ±2 mA Current at Output and Supply Pins .......................... ±50 mA Storage temperature ................................... -65°C to +150°C Ambient temp. with power applied .............. -40°C to +125°C Junction temp............................................................ +150°C ESD protection on all pins (HBM/MM) .................≥ 4 kV/300V *Notice: Stresses above those listed under “Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational listings of this specification is not implied. Expo- sure to maximum rating conditions for extended periods may affect device reliability. DC CHARACTERISTICS Electrical Characteristics: Unless otherwise indicated: V DD = +1.8V to +5.5V, VSS = GND, TA = +25°C, VIN+ = VDD/2, VIN- = VSS, and RPull-Up = 20 kΩ to VPU = VDD (see Figure 1-1). Parameters Symbol Min Typ Max Units Conditions Power Supply Supply Voltage VDD 1.8 — 5.5 V Quiescent Current per comparator IQ 60 100 130 µA IOUT = 0 Power Supply Rejection Ratio PSRR 63 70 — dB VCM = VSS Input Input Offset Voltage VOS -10 ±3+10 mV VCM = VSS (Note 1) Input Offset Drift ΔV OS/ΔT— ±2— µV/°C VCM = VSS Input Offset Current IOS — ±1— pA VCM = VSS Input Bias Current IB —1 — pA TA = +25°C, VIN- = VDD/2 —60 — pA TA = +85°C, VIN- = VDD/2 — 1500 5000 pA TA = +125°C, VIN- = VDD/2 Input Hysteresis Voltage VHYST 1.0 — 5.0 mV VCM = VSS (Notes 1, 2) Input Hysteresis Linear Temp. Co. TC1 —10 — µV/°C Input Hysteresis Quadratic Temp. Co. TC2 —0.3 — µV/°C2 Common-Mode Input Voltage Range VCMR VSS−0.2 — VDD+0.2 V VDD = 1.8V VSS−0.3 — VDD+0.3 V VDD = 5.5V Common-Mode Rejection Ratio CMRR 54 66 — dB VCM= -0.3V to VDD+0.3V, VDD = 5.5V 50 63 — dB VCM= VDD/2 to VDD+0.3V, VDD = 5.5V 54 65 — dB VCM= -0.3V to VDD/2, VDD = 5.5V Common Mode Input Impedance ZCM —1013||4 — Ω||pF Differential Input Impedance ZDIFF —1013||2 — Ω||pF Note 1: The input offset voltage is the center of the input-referred trip points. The input hysteresis is the difference between the input-referred trip points. 2: VHYST at different temperatures is estimated using VHYST (TA) = VHYST @ +25°C + (TA - 25°C) TC1 + (TA - 25°C) 2 TC 2. 3: Limit the output current to Absolute Maximum Rating of 50 mA. 4: The pull up voltage for the open drain output VPULL_UP can be as high as the absolute maximum rating of 10.5V. In this case, IOH_leak can be higher than 1 µA (see Figure 2-30). |
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