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MCP6566UT-E/MS 数据表(PDF) 4 Page - Microchip Technology

部件名 MCP6566UT-E/MS
功能描述  1.8V Low Power Open-Drain Output Comparator
PDF  44 Pages
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制造商  MICROCHIP [Microchip Technology]
网页  http://www.microchip.com
标志 MICROCHIP - Microchip Technology

MCP6566UT-E/MS 数据表(HTML) 4 Page - Microchip Technology

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MCP6566/6R/6U/7/9
DS22143B-page 4
© 2009 Microchip Technology Inc.
Push-Pull Output
Pull-up Voltage
VPULL_UP
1.6
5.5
V
High Level Output Voltage
VOH
——
VPULL_UP
V
(see Figure 1-1)
(Notes 3, 4)
High Level Output Current leakage
IOH_leak
——
1
µA
Note 4
Low Level Output Voltage
VOL
——
0.6
V
IOUT = 3mA/8mA @ VDD = 1.8V/5.5V
Short Circuit Current
(Notes 3)
ISC
±30
mA
Not to exceed Absolute Max. Rating
Output Pin Capacitance
COUT
—8
pF
DC CHARACTERISTICS (CONTINUED)
Electrical Characteristics: Unless otherwise indicated: V
DD = +1.8V to +5.5V, VSS = GND, TA = +25°C, VIN+ = VDD/2, VIN- = VSS,
and RPull-Up = 20 kΩ to VPU = VDD (see Figure 1-1).
Parameters
Symbol
Min
Typ
Max
Units
Conditions
Note 1:
The input offset voltage is the center of the input-referred trip points. The input hysteresis is the difference between the
input-referred trip points.
2:
VHYST at different temperatures is estimated using VHYST (TA) = VHYST @ +25°C + (TA - 25°C) TC1 + (TA - 25°C)
2 TC
2.
3:
Limit the output current to Absolute Maximum Rating of 50 mA.
4:
The pull up voltage for the open drain output VPULL_UP can be as high as the absolute maximum rating of 10.5V. In this
case, IOH_leak can be higher than 1 µA (see Figure 2-30).
AC CHARACTERISTICS
Electrical Characteristics: Unless otherwise indicated,: Unless otherwise indicated,: V
DD = +1.8V to +5.5V, VSS = GND,
TA = +25°C, VIN+ = VDD/2, VIN- = VSS, RPull-Up = 20 kΩ to VPU = VDD, and CL = 25 pf (see Figure 1-1).
Parameters
Symbo
l
Min
Typ
Max
Units
Conditions
Propagation Delay
High-to-Low,100 mV Overdrive
tPHL
—56
80
ns
VCM= VDD/2, VDD = 1.8V
—34
80
ns
VCM= VDD/2, VDD = 5.5V
Output
Fall Time
tF
—20
ns
Maximum Toggle Frequency
fTG
—4
MHz
VDD = 5.5V
—2
MHz
VDD = 1.8V
Input Voltage Noise
ENI
350
µV
P
-P
10 Hz to 10 MHz
(Note 1)
Note 1:
ENI is based on SPICE simulation.
2:
Rise time tR and tPLH depend on the load (RL and CL). These specification are valid for the specified load only.
TEMPERATURE SPECIFICATIONS
Electrical Characteristics: Unless otherwise indicated: V
DD = +1.8V to +5.5V and VSS = GND.
Parameters
Symbo
l
Min
Typ
Max
Units
Conditions
Temperature Ranges
Specified Temperature Range
TA
-40
+125
°C
Operating Temperature Range
TA
-40
+125
°C
Storage Temperature Range
TA
-65
+150
°C
Thermal Package Resistances
Thermal Resistance, SC70-5
θ
JA
—331
°C/W
Thermal Resistance, SOT-23-5
θ
JA
220.7
°C/W
Thermal Resistance, 8L-MSOP
θ
JA
—211
°C/W
Thermal Resistance, 8L-SOIC
θ
JA
149.5
°C/W
Thermal Resistance, 14L-SOIC
θ
JA
—95.3
°C/W
Thermal Resistance, 14L-TSSOP
θ
JA
—100
°C/W



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