AS5145 datasheet(11/36 Pages) AMSCO

11 / 36 page

www.austriamicrosystems.com/AS5145

Revision 1.10

11 - 36

AS5145

Data Sheet - Ti m i n g C h a r a c t e r i s t i c s

7 Timing Characteristics

TAMB = -40 to +150 ºC, VDD5V = 3.0 to 3.6V (3V operation) VDD5V = 4.5 to 5.5V (5V operation), unless otherwise noted.

Table 6. Timing Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Units

Synchronous Serial Interface (SSI)

tDOactive

Data output activated (logic high)

Time between falling edge of CSn and

data output activated

100

tCLKFE

First data shifted to output register

Time between falling edge of CSn and

first falling edge of CLK

500

TCLK/2

Start of data output

Rising edge of CLK shifts out one bit at a

time

500

tDOvalid

Data output valid

Time between rising edge of CLK and

data output valid

413

tDOtristate

Data output tri-state

After the last bit DO changes back to “tri-

state”

100

tCSn

Pulse width of CSn

CSn =high; To initiate read-out of next

angular position

500

fCLK

Read-out frequency

Clock frequency to read out serial data

MHz

Pulse Width Modulation Output

fPWM

PWM frequency

Signal period = 4098µs ±10% at TAMB

= -40 to +150ºC

220

224

268

PWMIN

Minimum pulse width

Position 0d; angle 0 degree

0.90

1.10

µs

PWMAX

Maximum pulse width

Position 4098d; angle 359.91 degrees

3686

4096

4506

µs

Programming Conditions

tPROG

Programming time per bit

Time to prog. a singe fuse bit

µs

tCHARGE

Refresh time per bit

Time to charge the cap after tPROG

1µs

fLOAD

LOAD frequency

Data can be loaded at n x 2µs

500

kHz

fREAD

READ frequency

Read the data from the latch

2.5

MHz

fWRITE

WRITE frequency

Write the data to the latch

2.5

MHz

AS5145 数据表(PDF) 11 Page - ams AG

AS5145 数据表(HTML) 11 Page - ams AG

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36

数据表下载