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TC1301A-ADAVUATR 数据表(PDF) 19 Page - Microchip Technology |
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TC1301A-ADAVUATR 数据表(HTML) 19 Page - Microchip Technology |
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19 / 28 page ![]() © 2008 Microchip Technology Inc. DS21798C-page 19 TC1301A/B Junction Temperature Estimate To estimate the internal junction temperature, the calculated temperature rise is added to the ambient or offset temperature. For this example, the worst-case junction temperature is estimated below: Maximum Package Power Dissipation at 50°C Ambient Temperature 7.0 TYPICAL LAYOUT TC1301A FIGURE 7-1: MSOP8 Silk Screen Layer. When doing the physical layout for the TC1301A/B, the highest priority is placing the input and output capacitors as close to the device pins as is practical. Figure 7-1 above represents a typical placement of the components when using SMT0805 capacitors. FIGURE 7-2: MSOP8 Wiring Layer. A wiring example for the TC1301A is shown. The vias represent the connection to a ground plane that is below the wiring layer. FIGURE 7-3: 3x3 DFN Silk-Screen Example. 8-lead 3X3 DFN physical layout example with bypass capacitor. FIGURE 7-4: 3x3 DFN Top Metal Layer Example. Vias represent the connection to a ground plane that is below the wiring layer. 8.0 ADDITIONAL OUTPUT VOLTAGE AND THRESHOLD VOLTAGE OPTIONS 8.1 Output Voltage and Threshold Voltage Range Table 8-1 describes the range of output voltage options available for the TC1301A/B. VOUT1 and VOUT2 can be factory preset from 1.5V to 3.3V in 100 mV increments. The VDET (TC1301A) or threshold voltage (TC1301B) can be preset from 2.2V to 3.2V in 10 mV increments. TABLE 8-1: CUSTOM OUTPUT VOLTAGE AND THRESHOLD VOLTAGE RANGES For a listing of TC1301A/B standard parts, refer to the Product Identification System on page 25. TJ =TJRISE + TA(MAX) TJ = 83.1°C 3X3DFN8 (41° C/W R θ JA) PD(MAX) = (125°C - 50°C) / 41° C/W PD(MAX) = 1.83 Watts MSOP8 (208° C/W R θ JA) PD(MAX) = (125°C - 50°C) / 208° C/W PD(MAX) = 0.360 Watts VOUT1 VOUT2 VDET Threshold 1.5V to 3.3V 1.5V to 3.3V 2.2V to 3.2V |
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