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APTM50AM38STG 数据表(PDF) 7 Page - Microsemi Corporation

部件名 APTM50AM38STG
功能描述  Phase leg Series & parallel diodes MOSFET Power Module
PDF  7 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  MICROSEMI [Microsemi Corporation]
网页  http://www.microsemi.com
标志 MICROSEMI - Microsemi Corporation

APTM50AM38STG 数据表(HTML) 7 Page - Microsemi Corporation

  APTM50AM38STG Datasheet HTML 1Page - Microsemi Corporation APTM50AM38STG Datasheet HTML 2Page - Microsemi Corporation APTM50AM38STG Datasheet HTML 3Page - Microsemi Corporation APTM50AM38STG Datasheet HTML 4Page - Microsemi Corporation APTM50AM38STG Datasheet HTML 5Page - Microsemi Corporation APTM50AM38STG Datasheet HTML 6Page - Microsemi Corporation APTM50AM38STG Datasheet HTML 7Page - Microsemi Corporation  
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APTM50AM38STG
www.microsemi.com
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Delay Times vs Current
td(on)
td(off)
0
20
40
60
80
100
20
40
60
80
100
120
140
ID, Drain Current (A)
VDS=333V
RG=2Ω
TJ=125°C
L=100µH
Rise and Fall times vs Current
tr
tf
0
20
40
60
80
100
120
20
40
60
80
100
120
140
ID, Drain Current (A)
VDS=333V
RG=2Ω
TJ=125°C
L=100µH
Hard
switching
ZCS
ZVS
0
50
100
150
200
250
300
350
400
20
30
40
50
60
70
80
ID, Drain Current (A)
Operating Frequency vs Drain Current
VDS=333V
D=50%
RG=2Ω
TJ=125°C
TC=75°C
TJ=25°C
TJ=150°C
1
10
100
1000
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
VSD, Source to Drain Voltage (V)
Source to Drain Diode Forward Voltage
Switching Energy vs Current
Eon
Eoff
0
1
2
3
4
5
20
40
60
80
100
120
140
ID, Drain Current (A)
VDS=333V
RG=2Ω
TJ=125°C
L=100µH
Eon
Eoff
Eoff
0
1
2
3
4
5
6
7
8
0
5
10
15
20
25
Gate Resistance (Ohms)
Switching Energy vs Gate Resistance
VDS=333V
ID=90A
TJ=125°C
L=100µH
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.



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