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APTM50AM38STG 数据表(PDF) 2 Page - Microsemi Corporation

部件名 APTM50AM38STG
功能描述  Phase leg Series & parallel diodes MOSFET Power Module
PDF  7 Pages
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制造商  MICROSEMI [Microsemi Corporation]
网页  http://www.microsemi.com
标志 MICROSEMI - Microsemi Corporation

APTM50AM38STG 数据表(HTML) 2 Page - Microsemi Corporation

  APTM50AM38STG Datasheet HTML 1Page - Microsemi Corporation APTM50AM38STG Datasheet HTML 2Page - Microsemi Corporation APTM50AM38STG Datasheet HTML 3Page - Microsemi Corporation APTM50AM38STG Datasheet HTML 4Page - Microsemi Corporation APTM50AM38STG Datasheet HTML 5Page - Microsemi Corporation APTM50AM38STG Datasheet HTML 6Page - Microsemi Corporation APTM50AM38STG Datasheet HTML 7Page - Microsemi Corporation  
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APTM50AM38STG
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All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
VGS = 0V,VDS = 500V
Tj = 25°C
200
IDSS
Zero Gate Voltage Drain Current
VGS = 0V,VDS = 400V
Tj = 125°C
1000
µA
RDS(on)
Drain – Source on Resistance
VGS = 10V, ID = 45A
38
45
m
Ω
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 5mA
3
5
V
IGSS
Gate – Source Leakage Current
VGS = ±30 V, VDS = 0V
±150
nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Ciss
Input Capacitance
11.2
Coss
Output Capacitance
2.4
Crss
Reverse Transfer Capacitance
VGS = 0V
VDS = 25V
f = 1MHz
0.18
nF
Qg
Total gate Charge
246
Qgs
Gate – Source Charge
66
Qgd
Gate – Drain Charge
VGS = 10V
VBus = 250V
ID = 90A
130
nC
Td(on)
Turn-on Delay Time
18
Tr
Rise Time
35
Td(off)
Turn-off Delay Time
87
Tf
Fall Time
Inductive switching @ 125°C
VGS = 15V
VBus = 333V
ID = 90A
RG = 2Ω
77
ns
Eon
Turn-on Switching Energy
1510
Eoff
Turn-off Switching Energy
Inductive switching @ 25°C
VGS = 15V, VBus = 333V
ID = 90A, RG = 2Ω
1452
µJ
Eon
Turn-on Switching Energy
2482
Eoff
Turn-off Switching Energy
Inductive switching @ 125°C
VGS = 15V, VBus = 333V
ID = 90A, RG = 2Ω
1692
µJ
Series diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
VRRM
Maximum Peak Repetitive Reverse Voltage
200
V
Tj = 25°C
500
IRM
Maximum Reverse Leakage Current
VR=200V
Tj = 125°C
750
µA
IF
DC Forward Current
Tc = 85°C
90
A
IF = 90A
1.1
1.15
IF = 180A
1.4
VF
Diode Forward Voltage
IF = 90A
Tj = 125°C
0.9
V
Tj = 25°C
24
trr
Reverse Recovery Time
Tj = 125°C
48
ns
Tj = 25°C
99
Qrr
Reverse Recovery Charge
IF = 90A
VR = 133V
di/dt = 600A/µs
Tj = 125°C
450
nC



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